- 专利标题: Direct graphene growing method
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申请号: US13465488申请日: 2012-05-07
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公开(公告)号: US10723620B2公开(公告)日: 2020-07-28
- 发明人: Hyeon-jin Shin , Jae-young Choi , Yun-sung Woo , Seon-mi Yoon
- 申请人: Hyeon-jin Shin , Jae-young Choi , Yun-sung Woo , Seon-mi Yoon
- 申请人地址: KR Gyeonggi-Do
- 专利权人: SAMSUNG ELECTRONICS CO., LTD.
- 当前专利权人: SAMSUNG ELECTRONICS CO., LTD.
- 当前专利权人地址: KR Gyeonggi-Do
- 代理机构: Cantor Colburn LLP
- 优先权: com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@73519215 com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@72c5baab
- 主分类号: C23C16/26
- IPC分类号: C23C16/26 ; C23C16/02 ; C23C16/56 ; B82Y30/00 ; B82Y40/00 ; H01L21/02 ; C01B32/186
摘要:
A method of preparing crystalline graphene includes performing a first thermal treatment including supplying heat to an inorganic substrate in a reactor, introducing a vapor carbon supply source into the reactor during the first thermal treatment to form activated carbon, and binding of the activated carbon on the inorganic substrate to grow the crystalline graphene.
公开/授权文献
- US20120282489A1 DIRECT GRAPHENE GROWING METHOD 公开/授权日:2012-11-08