- 专利标题： Method for forming semiconductor device structure with overlay grating
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申请号： US16662970申请日： 2019-10-24
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公开(公告)号： US10734325B2公开(公告)日： 2020-08-04
- 发明人: Long-Yi Chen , Jia-Hong Chu , Chi-Wen Lai , Chia-Ching Liang , Kai-Hsiung Chen , Yu-Ching Wang , Po-Chung Cheng , Hsin-Chin Lin , Meng-Wei Chen , Kuei-Shun Chen
- 申请人： Taiwan Semiconductor Manufacturing Co., Ltd.
- 申请人地址： TW Hsinchu
- 专利权人： TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- 当前专利权人： TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- 当前专利权人地址： TW Hsinchu
- 代理机构： Birch, Stewart, Kolasch & Birch, LLP
- 主分类号： H01L23/544
- IPC分类号： H01L23/544 ; H01L21/67 ; H01L21/66 ; H01L21/033 ; G03F9/00 ; G03F7/20 ; H01L21/768
摘要：
A method for forming a semiconductor device structure is provided. The method includes forming a first overlay grating over a substrate. The method includes forming a layer over the first overlay grating. The method includes forming a second overlay grating over the layer. The second overlay grating has a third strip portion and a fourth strip portion, the third strip portion and the fourth strip portion are elongated in the first elongated axis and are spaced apart from each other, there is a second distance between a third sidewall of the third strip portion and a fourth sidewall of the fourth strip portion, the third sidewall faces away from the fourth strip portion, the fourth sidewall faces the third strip portion, the first distance is substantially equal to the second distance, and the first trench extends across the third strip portion and the fourth strip portion.
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