- 专利标题： Field effect transistor, method for manufacturing same, display element, display device, and system
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申请号： US16047374申请日： 2018-07-27
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公开(公告)号： US10748784B2公开(公告)日： 2020-08-18
- 发明人: Sadanori Arae , Naoyuki Ueda , Yuki Nakamura , Yukiko Abe , Shinji Matsumoto , Yuji Sone , Ryoichi Saotome , Minehide Kusayanagi
- 申请人： Sadanori Arae , Naoyuki Ueda , Yuki Nakamura , Yukiko Abe , Shinji Matsumoto , Yuji Sone , Ryoichi Saotome , Minehide Kusayanagi
- 申请人地址： JP Tokyo
- 专利权人： Ricoh Company, Ltd.
- 当前专利权人： Ricoh Company, Ltd.
- 当前专利权人地址： JP Tokyo
- 代理机构： IPUSA, PLLC
- 优先权： com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@1ab0b943 com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@2e65150e com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@49a9d4c9
- 主分类号： H01L29/786
- IPC分类号： H01L29/786 ; H01L29/66 ; H01L29/51 ; H01L29/49 ; H01L27/12 ; H01L21/02 ; H01L21/441 ; H01L21/4763 ; H01L29/417 ; H01L21/3213 ; H01L29/45 ; H01L29/423 ; G02F1/1368 ; H01L27/32
摘要：
A method is provided for manufacturing a field effect transistor that includes a gate insulating layer and an electrode including a first conductive film and a second conductive film successively laminated on a predetermined surface of the gate insulating layer. The method includes forming an oxide film including element A, which is an alkaline earth metal, and element B, which is at least one of Ga, Sc, Y and a lanthanide, as the gate insulating layer; forming a first conductive film that dissolves in an organic alkaline solution on the oxide film; forming a second conductive film on the first conductive film; etching the second conductive film with an etching solution having a higher etch rate for the second conductive film as compared with that for the first conductive film; and etching the first conductive film with the organic alkaline solution using the second conductive film as a mask.
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