Invention Grant
- Patent Title: Semiconductor device and manufacturing method thereof
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Application No.: US16114174Application Date: 2018-08-27
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Publication No.: US10749025B2Publication Date: 2020-08-18
- Inventor: Tatsuya Naito
- Applicant: FUJI ELECTRIC CO., LTD.
- Applicant Address: JP Kanagawa
- Assignee: FUJI ELECTRIC CO., LTD.
- Current Assignee: FUJI ELECTRIC CO., LTD.
- Current Assignee Address: JP Kanagawa
- Priority: com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@68a54421 com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@5fecc516
- Main IPC: H01L29/78
- IPC: H01L29/78 ; H01L29/739 ; H01L29/06 ; H01L29/417 ; H01L29/08 ; H01L29/861 ; H01L29/66 ; H01L29/40 ; H01L29/45 ; H01L29/10 ; H01L29/868
Abstract:
A semiconductor device having a contact trench is provided. The semiconductor device including: a semiconductor substrate; a drift region of the first conductivity type provided on an upper surface side of the semiconductor substrate; a base region of the second conductivity type provided above the drift region; a source region of the first conductivity type provided above the base region; two or more trench portions provided penetrating through the source region and the base region from an upper end side of the source region; a contact trench provided in direct contact with the source region between adjacent trench portions; and a contact layer of the second conductivity type provided below the contact trench, is provided. A peak of a doping concentration of the contact layer is positioned shallower than a position of a lower end of the source region.
Public/Granted literature
- US20180374948A1 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF Public/Granted day:2018-12-27
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