Invention Grant
- Patent Title: Light-emitting diode and application therefor
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Application No.: US16660460Application Date: 2019-10-22
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Publication No.: US10749080B2Publication Date: 2020-08-18
- Inventor: Jong Hyeon Chae , Joon Sup Lee , Won Young Roh , Min Woo Kang , Jong Min Jang , Hyun A Kim , Daewoong Suh
- Applicant: SEOUL VIOSYS CO., LTD.
- Applicant Address: KR Gyeonggi-do
- Assignee: Seoul Viosys Co., Ltd.
- Current Assignee: Seoul Viosys Co., Ltd.
- Current Assignee Address: KR Gyeonggi-do
- Agency: Burris Law, PLLC
- Priority: com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@707e5536 com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@1e88c3f1 com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@54db0c2f
- Main IPC: H01L33/44
- IPC: H01L33/44 ; H01L23/00 ; H01L33/24 ; H01L33/14 ; H01L33/10 ; H01L33/62 ; H01L33/54 ; H01L33/40 ; H01L27/15 ; H01L33/20 ; H01L33/38 ; H01L25/075 ; H01L33/08

Abstract:
A light emitting diode apparatus includes a substrate, a first conductive type semiconductor layer, a second conductive type semiconductor layer, a mesa, a lower insulating layer, a first pad and a second pad. The substrate has a first surface and a second surface opposite to the first surface. The first conductivity type semiconductor layer is disposed on the first surface of the substrate. The mesa is disposed on the first conductive semiconductor layer and has an active layer and the second conductive semiconductor layer. A peripheral edge of the first conductive semiconductor layer is exposed. The lower insulating layer covers the mesa and the first conductive semiconductor layer and has a plurality of first openings exposing the first conductive semiconductor layer along a peripheral edge of the substrate.
Public/Granted literature
- US20200098949A1 LIGHT-EMITTING DIODE AND APPLICATION THEREFOR Public/Granted day:2020-03-26
Information query
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