Light emitting device
    2.
    发明授权

    公开(公告)号:US12009466B2

    公开(公告)日:2024-06-11

    申请号:US17983239

    申请日:2022-11-08

    IPC分类号: H01L33/62 H01L33/52

    CPC分类号: H01L33/62 H01L33/52

    摘要: A light emitting device including first, second, and third light emitting parts one over another along a first direction, a first conductive pattern at least partially disposed between the second and third light emitting parts and including a first portion extending in a second direction perpendicular to the first direction and electrically coupled with the second light emitting part, and a second portion extending from one end of the first portion, a second conductive pattern disposed on and electrically coupled to the third light emitting part, and a first passivation covering the first light emitting part and including a first portion extending in the second direction and a second portion extending from one end of the first portion and forming an inclined angle with the second direction, in which the first conductive pattern at least partially overlaps with the second portion of the first passivation.

    LIGHT EMITTING DIODE PACKAGE AND METHOD OF MANUFACTURING THE SAME

    公开(公告)号:US20230155072A1

    公开(公告)日:2023-05-18

    申请号:US18098030

    申请日:2023-01-17

    IPC分类号: H01L33/48

    CPC分类号: H01L33/486 H01L33/20

    摘要: A light emitting diode, including a first type semiconductor layer, an active layer, and a second type semiconductor layer; an ohmic contact layer disposed on the second type semiconductor layer; a first insulating layer disposed on the semiconductor structure and including a first opening overlapping the first type semiconductor layer and a second opening overlapping the ohmic contact layer; a first connection wiring disposed on the first insulating layer, the first connection wiring having a first portion and a second portion; and a second connection wiring disposed on the first insulating layer and spaced apart from the first connection wiring, the second connection wiring electrically connected to the second type semiconductor layer through the second opening. The second connection wiring surrounds at least a portion of the first portion of the first connection wiring in a plan view.

    LED unit for display and display apparatus having the same

    公开(公告)号:US11527514B2

    公开(公告)日:2022-12-13

    申请号:US16673184

    申请日:2019-11-04

    摘要: A light emitting device for a display includes a pixel region including first, second, and third LED stacks, an adhesive layer disposed between the first and second LED stacks, or between the second and third LED stacks, a metal bonding layer at least partially surrounded by the adhesive layer, and disposed between and is electrically connected to the first and second LED stacks, or the second and third LED stacks, and a common electrode pad connected to the first, second, and third LED stacks, first, second, and third electrode pads connected to the first, second, and third LED stacks, respectively, and the first, second, and third LED stacks are configured to be independently driven using the electrode pads.

    Light emitting device for display and display apparatus having the same

    公开(公告)号:US11437353B2

    公开(公告)日:2022-09-06

    申请号:US17096289

    申请日:2020-11-12

    摘要: A light emitting device including a first LED stack, a second LED stack, and a third LED stack each including first and second conductivity type semiconductor layers, a first bonding layer between the second and third LED stacks, a second bonding layer between the first and second LED stacks, a first planarization layer between the second bonding layer and the second LED stack, a second planarization layer disposed on the first LED stack, lower buried vias passing through the first planarization layer, the second LED stack, and the first bonding layer and electrically connected to the semiconductor layers of the third LED stack, respectively, and upper buried vias passing through the second planarization layer and the first LED stack, in which a width of an upper end of each of the lower buried vias and the upper buried vias is greater than a width of a corresponding through hole.