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公开(公告)号：US12125831B2
公开(公告)日：2024-10-22
申请号：US18231764
申请日：2023-08-08
Applicant: SEOUL VIOSYS CO., LTD.
Inventor： Jong Min Jang , Chang Yeon Kim
IPC: H01L33/56 , H01L23/00 , H01L25/075 , H01L33/62 , H01L33/00
CPC classification number: H01L25/0756 , H01L24/32 , H01L24/33 , H01L25/0753 , H01L33/62 , H01L33/0095 , H01L33/56 , H01L2224/32145 , H01L2224/33181 , H01L2924/12041
Abstract: A light emitting device for a display including: a base layer; a first LED sub-unit, a second LED sub-unit, and a third LED sub-unit on the base layer; and a supporting layer covering the first LED sub-unit, the second LED sub-unit, and the third LED sub-unit, in which the third LED sub-unit is configured to emit light having a shorter wavelength than that of light emitted from the first LED sub-unit, and a luminous intensity ratio of light emitted from the third LED sub-unit and the second LED sub-unit is configured to be about 6:1.
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公开(公告)号：US12100695B2
公开(公告)日：2024-09-24
申请号：US18225643
申请日：2023-07-24
Applicant: SEOUL VIOSYS CO., LTD.
Inventor： Jong Min Jang , Chang Yeon Kim
CPC classification number: H01L25/0756 , H01L27/156 , H01L33/06 , H01L33/08 , H01L33/14 , H01L33/382 , H01L33/387
Abstract: A light emitting device including a first light emitting part including a first n-type semiconductor layer, a first active layer, a first p-type semiconductor layer, and a first transparent electrode, a second light emitting part disposed over the first light emitting part and including a second n-type semiconductor layer, a second active layer, a second p-type semiconductor layer, and a second transparent electrode, and a third light emitting part disposed over the second light emitting part and including a third n-type semiconductor layer, a third active layer, a third p-type semiconductor layer, and a third transparent electrode, in which the light emitting device has substantially a quadrangular shape when viewed from the top, and has first to fourth corners.
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公开(公告)号：US11978829B2
公开(公告)日：2024-05-07
申请号：US17979761
申请日：2022-11-03
Applicant: SEOUL VIOSYS CO., LTD.
Inventor： Jong Min Jang , Chang Youn Kim
IPC: H01L33/38 , H01L25/075 , H01L33/50 , H01L33/62
CPC classification number: H01L33/382 , H01L25/0753 , H01L33/504 , H01L33/62
Abstract: A display device including a circuit board, and pixels each including a light emitting structure including epitaxial stacks and having a light emitting area defined by the epitaxial stacks, an encapsulating member covering a side surface and an upper surface of the light emitting structure, bump electrodes disposed on the light emitting structure, at least a portion of each bump electrode overlapping with the light emitting area, and fan-out lines disposed on the encapsulating member and electrically connected to the light emitting structure through the bump electrodes, in which at least a first portion of a surface of the fan-out lines is exposed to the outside to receive electrical signal for independent driving of the light emitting structure, and the first portion of the fan-out lines does not overlap the light emitting area in a plan view.
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公开(公告)号：US11935990B2
公开(公告)日：2024-03-19
申请号：US17537341
申请日：2021-11-29
Applicant: Seoul Viosys Co., Ltd.
Inventor： Jong Min Jang , Chae Hon Kim , Chang Youn Kim , Jae Hee Lim
IPC: H01L33/36 , H01L23/00 , H01L33/10 , H01L33/32 , H01L33/40 , H01L33/60 , H01L33/00 , H01L33/20 , H01L33/22 , H01L33/46
CPC classification number: H01L33/405 , H01L24/13 , H01L33/10 , H01L33/32 , H01L33/60 , H01L33/007 , H01L33/0093 , H01L33/20 , H01L33/22 , H01L33/46 , H01L2933/0016 , H01L2933/0025
Abstract: A light emitting diode including a side reflection layer. The light emitting diode includes: a semiconductor stack and a light exit surface having a roughened surface through which light generated from an active layer is emitted; side surfaces defining the light exit surface; and a side reflection layer covering at least part of the side surfaces. The light exit surface is disposed over a first conductivity type semiconductor layer opposite to the ohmic reflection layer, all layers from the active layer to the light exit surface are formed of gallium nitride-based semiconductors, and a distance from the active layer to the light exit surface is 50 μm or more.
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公开(公告)号：US11855121B2
公开(公告)日：2023-12-26
申请号：US16848914
申请日：2020-04-15
Applicant: Seoul Viosys Co., Ltd.
Inventor： Jong Min Jang , Chang Yeon Kim , Myoung Hak Yang
CPC classification number: H01L27/15 , H01L25/0753 , H01L33/007 , H01L33/0095 , H01L33/38 , H01L33/44 , H01L33/54 , H01L33/62 , H01L2933/005 , H01L2933/0016 , H01L2933/0025 , H01L2933/0066
Abstract: A light emitting chip including a first LED sub-unit, a second LED sub-unit disposed on the first LED sub-unit, a third LED sub-unit disposed on the second LED sub-unit, a first bonding layer interposed between the first and second LED sub-units, a second bonding layer interposed between second and third LED sub-units, and a first connection electrode electrically connected to and overlapping at least one of the first, second, and third LED sub-units, the first connection electrode having first and second opposing side surfaces, the first side surface having a first length and the second side surface having a second length, in which the difference in length between the first side surface and the second side surface of the first connection electrode is greater than a thickness of at least one of the LED sub-units.
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公开(公告)号：US11784292B2
公开(公告)日：2023-10-10
申请号：US17881512
申请日：2022-08-04
Applicant: Seoul Viosys Co., Ltd.
Inventor： Jong Min Jang , Chang Youn Kim
CPC classification number: H01L33/54 , H01L25/13 , H01L33/0095 , H01L33/08 , H01L33/56 , H01L33/62 , H01L2933/005
Abstract: A light emitting device including a printed circuit board having a front surface and a rear surface, at least one light emitting source disposed on the front surface to emit light in a direction away from the printed circuit board, and a molding layer surrounding the light emitting source, in which the light emitting source includes a light emitting structure, a substrate disposed on the light emitting structure, and a plurality of bump electrodes disposed between the light emitting structure and the printed circuit board, the molding layer covers an upper surface of the substrate and a fine concavo-convex part is formed on a surface of the molding layer exposed to the outside, and the molding layer has a first thickness to transmit at least a fraction of light emitted from the light emitting source, and includes a filler to change a direction of emitted light.
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公开(公告)号：US11688840B2
公开(公告)日：2023-06-27
申请号：US17133623
申请日：2020-12-23
Applicant: SEOUL VIOSYS CO., LTD.
Inventor： Jong Min Jang , Sung Hyun Lee , Chang Yeon Kim
CPC classification number: H01L33/62 , H01L27/156 , H01L33/382 , H01L33/40 , H01L33/486
Abstract: A light emitting device including a first light emitting stack, a second light emitting stack disposed under the first light emitting stack, a third light emitting stack disposed under the second light emitting stack, first, second, third, and fourth connection electrodes disposed over the first light emitting stack, and electrically connected to the first, second, and third light emitting stacks, and bonding metal layers disposed on upper surfaces of the first, second, third, and fourth connection electrodes, in which each of the first, second, third, and fourth connection electrodes includes a groove on an upper surface thereof, and the bonding metal layers cover the grooves of the first, second, third, and fourth connection electrodes, respectively.
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公开(公告)号：US20230057649A1
公开(公告)日：2023-02-23
申请号：US17979761
申请日：2022-11-03
Applicant: SEOUL VIOSYS CO., LTD.
Inventor： Jong Min Jang , Chang Youn Kim
IPC: H01L33/38 , H01L25/075 , H01L33/62 , H01L33/50
Abstract: A display device including a circuit board, and pixels each including a light emitting structure including epitaxial stacks and having a light emitting area defined by the epitaxial stacks, an encapsulating member covering a side surface and an upper surface of the light emitting structure, bump electrodes disposed on the light emitting structure, at least a portion of each bump electrode overlapping with the light emitting area, and fan-out lines disposed on the encapsulating member and electrically connected to the light emitting structure through the bump electrodes, in which at least a first portion of a surface of the fan-out lines is exposed to the outside to receive electrical signal for independent driving of the light emitting structure, and the first portion of the fan-out lines does not overlap the light emitting area in a plan view.
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公开(公告)号：US11527514B2
公开(公告)日：2022-12-13
申请号：US16673184
申请日：2019-11-04
Applicant: SEOUL VIOSYS CO., LTD.
Inventor： Jong Hyeon Chae , Chang Yeon Kim , Seong Gyu Jang , Ho Joon Lee , Jong Min Jang , Dae Sung Cho
IPC: H01L25/075 , H01L33/50 , H01L33/08 , H01L33/38
Abstract: A light emitting device for a display includes a pixel region including first, second, and third LED stacks, an adhesive layer disposed between the first and second LED stacks, or between the second and third LED stacks, a metal bonding layer at least partially surrounded by the adhesive layer, and disposed between and is electrically connected to the first and second LED stacks, or the second and third LED stacks, and a common electrode pad connected to the first, second, and third LED stacks, first, second, and third electrode pads connected to the first, second, and third LED stacks, respectively, and the first, second, and third LED stacks are configured to be independently driven using the electrode pads.
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公开(公告)号：US20220085251A1
公开(公告)日：2022-03-17
申请号：US17537341
申请日：2021-11-29
Applicant: Seoul Viosys Co., Ltd.
Inventor： Jong Min Jang , Chae Hon Kim , Chang Youn Kim , Jae Hee Lim
Abstract: A light emitting diode including a side reflection layer. The light emitting diode includes: a semiconductor stack and a light exit surface having a roughened surface through which light generated from an active layer is emitted; side surfaces defining the light exit surface; and a side reflection layer covering at least part of the side surfaces. The light exit surface is disposed over a first conductivity type semiconductor layer opposite to the ohmic reflection layer, all layers from the active layer to the light exit surface are formed of gallium nitride-based semiconductors, and a distance from the active layer to the light exit surface is 50 μm or more.
