- 专利标题： Semiconductor device and manufacturing method of the same
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申请号： US16670918申请日： 2019-10-31
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公开(公告)号： US10756115B2公开(公告)日： 2020-08-25
- 发明人: Takaaki Tsunomura , Yoshiki Yamamoto , Masaaki Shinohara , Toshiaki Iwamatsu , Hidekazu Oda
- 申请人： Renesas Electronics Corporation
- 申请人地址： JP Tokyo
- 专利权人： Renesas Electronics Corporation
- 当前专利权人： Renesas Electronics Corporation
- 当前专利权人地址： JP Tokyo
- 代理机构： SGPatents PLLC
- 优先权： com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@a898caa
- 主分类号： H01L21/8234
- IPC分类号： H01L21/8234 ; H01L27/12 ; H01L29/66 ; H01L29/78 ; H01L29/417 ; H01L21/8238
摘要：
On a semiconductor substrate having an SOI region and a bulk silicon region formed on its upper surface, epitaxial layers are formed in source and drain regions of a MOSFET formed in the SOI region, and no epitaxial layer is formed in source and drain regions of a MOSFET formed in the bulk silicon region. By covering the end portions of the epitaxial layers with silicon nitride films, even when diffusion layers are formed by implanting ions from above the epitaxial layers, it is possible to prevent the impurity ions from being implanted down to a lower surface of a silicon layer.
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