发明授权
- 专利标题： Semiconductor devices including source/drain regions having multiple epitaxial patterns
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申请号： US15379190申请日： 2016-12-14
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公开(公告)号： US10756211B2公开(公告)日： 2020-08-25
- 发明人: Keum Seok Park , Jungho Yoo , Jinyeong Joe , Bonyoung Koo , Dongsuk Shin , Hongsik Yoon , Byeongchan Lee
- 申请人： Samsung Electronics Co., Ltd.
- 申请人地址： KR
- 专利权人： Samsung Electronics Co., Ltd.
- 当前专利权人： Samsung Electronics Co., Ltd.
- 当前专利权人地址： KR
- 代理机构： Myers Bigel, P.A.
- 优先权： com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@3b9a0628
- 主分类号： H01L29/78
- IPC分类号： H01L29/78 ; H01L29/165 ; H01L29/66 ; H01L21/02 ; H01L29/06 ; H01L29/08 ; H01L29/45
摘要：
A semiconductor device includes an active pattern protruding from a substrate, a gate structure crossing over the active pattern, and source/drain regions disposed on the active pattern at opposite sides of the gate structure. Each of the source/drain regions includes a first epitaxial pattern contacting the active pattern and a second epitaxial pattern on the first epitaxial pattern. The first epitaxial pattern comprises a material having a lattice constant which is the same as that of the substrate, and the second epitaxial pattern comprises a material having a lattice constant greater than that of the first epitaxial pattern.
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