Invention Grant
- Patent Title: Semiconductor devices including source/drain regions having multiple epitaxial patterns
-
Application No.: US15379190Application Date: 2016-12-14
-
Publication No.: US10756211B2Publication Date: 2020-08-25
- Inventor: Keum Seok Park , Jungho Yoo , Jinyeong Joe , Bonyoung Koo , Dongsuk Shin , Hongsik Yoon , Byeongchan Lee
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR
- Agency: Myers Bigel, P.A.
- Priority: com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@3b9a0628
- Main IPC: H01L29/78
- IPC: H01L29/78 ; H01L29/165 ; H01L29/66 ; H01L21/02 ; H01L29/06 ; H01L29/08 ; H01L29/45
Abstract:
A semiconductor device includes an active pattern protruding from a substrate, a gate structure crossing over the active pattern, and source/drain regions disposed on the active pattern at opposite sides of the gate structure. Each of the source/drain regions includes a first epitaxial pattern contacting the active pattern and a second epitaxial pattern on the first epitaxial pattern. The first epitaxial pattern comprises a material having a lattice constant which is the same as that of the substrate, and the second epitaxial pattern comprises a material having a lattice constant greater than that of the first epitaxial pattern.
Public/Granted literature
- US20170092767A1 SEMICONDUCTOR DEVICES INCLUDING SOURCE/DRAIN REGIONS HAVING MULTIPLE EPITAXIAL PATTERNS Public/Granted day:2017-03-30
Information query
IPC分类:
