公开(公告)号：US10208401B2

公开(公告)日：2019-02-19

申请号：US15664294

申请日：2017-07-31

申请人： Samsung Electronics Co., Ltd.

发明人： Keum Seok Park ,  Sunjung Kim ,  Yihwan Kim

IPC分类号： C30B25/04 ,  C30B33/12 ,  C30B25/12 ,  C30B25/14 ,  C30B31/16 ,  C30B31/14 ,  H01L21/02 ,  H01L29/66

摘要： Disclosed is a substrate treating apparatus comprising a wafer chuck on which a substrate is placed, an injector unit on a side of the wafer chuck and injecting process gases that include a first gas and a second gas, and a gas supply unit supplying the process gases to the injector unit. The gas supply unit comprises first and second gas supply sources that respectively accommodate the first and second gases, first and second gas supply lines that respectively connect the first and second gas supply sources to the injector unit, and first and second heating units that are respectively disposed on the first and second gas supply lines. The first heating units disposed on the first gas supply line have a density per unit length greater than the density per unit length of the second heating units disposed on the second gas supply line.

公开(公告)号：US20180025901A1

公开(公告)日：2018-01-25

申请号：US15416408

申请日：2017-01-26

申请人： Samsung Electronics Co., Ltd.

发明人： Keum Seok Park ,  Sun Jung Kim ,  Yi Hwan Kim ,  Pan Kwi Park ,  Dong Suk Shin ,  Hyun Kwan Yu ,  Seung Hun Lee

IPC分类号： H01L21/02 ,  B08B7/04 ,  H01L29/66 ,  B08B7/00 ,  H01L21/67 ,  H01L21/687

CPC分类号： H01L21/02057 ,  B08B7/0035 ,  B08B7/04 ,  H01J37/32091 ,  H01J37/32889 ,  H01J2237/335 ,  H01L21/02532 ,  H01L21/0262 ,  H01L21/02639 ,  H01L21/67034 ,  H01L21/67109 ,  H01L21/67167 ,  H01L21/67184 ,  H01L21/67201 ,  H01L21/6831 ,  H01L21/68707 ,  H01L21/68742 ,  H01L29/165 ,  H01L29/66628 ,  H01L29/66636 ,  H01L29/66659 ,  H01L29/7848

摘要： A precleaning apparatus includes a chamber having an internal space in which a substrate is cleaned, a substrate support disposed in the chamber and configured to support the substrate, a plasma generation unit disposed in the chamber and configured to generate plasma gas, a heating unit configured to heat the substrate on the substrate support, a cleaning gas supply unit configured to supply gas for oxide etching to the internal space of the chamber, and a hydrogen gas supply unit configured to supply hydrogen gas to the internal space of the chamber.

公开(公告)号：US11821106B2

公开(公告)日：2023-11-21

申请号：US15869905

申请日：2018-01-12

申请人： Samsung Electronics Co., Ltd.

发明人： Keum Seok Park ,  Gyeom Kim ,  Yi Hwan Kim ,  Sun Jung Kim ,  Pan Kwi Park ,  Jeong Ho Yoo

IPC分类号： C30B25/12 ,  C23C16/458 ,  H01L29/66 ,  H01L29/08

CPC分类号： C30B25/12 ,  C23C16/4585 ,  H01L29/0847 ,  H01L29/66636 ,  H01L29/66795

摘要： A semiconductor process chamber includes a susceptor, a base plate surrounding the susceptor, a liner on an inner sidewall of the base plate, and a preheat ring between the susceptor and the base plate and coplanar with the susceptor. The process chamber further includes an upper dome coupled to the base plate and covering an upper surface of the susceptor. The upper dome includes a first section on an upper surface of the base plate and a second section extending from the first section and overlapping the susceptor. The first section includes a first region on the upper surface of the base plate, a second region extending from the first region past the base plate, and a third region extending from the second region with a decreasing thickness to contact the second section.

公开(公告)号：US20190214498A1

公开(公告)日：2019-07-11

申请号：US16351328

申请日：2019-03-12

申请人： SAMSUNG ELECTRONICS CO., LTD.

发明人： Sungkwan Kang ,  Keum Seok Park ,  Byeongchan Lee ,  Sangbom Kang ,  Nam-Kyu Kim

IPC分类号： H01L29/78 ,  H01L29/66 ,  H01L21/02 ,  H01L29/49 ,  H01L29/51 ,  H01L29/08 ,  H01L21/8238

CPC分类号： H01L29/7848 ,  H01L21/0245 ,  H01L21/02532 ,  H01L21/0262 ,  H01L21/02639 ,  H01L21/823807 ,  H01L21/823814 ,  H01L29/0847 ,  H01L29/4975 ,  H01L29/51 ,  H01L29/518 ,  H01L29/665 ,  H01L29/66507 ,  H01L29/66545 ,  H01L29/66628 ,  H01L29/66636

摘要： A semiconductor device has a silicide source/drain region is fabricated by growing silicon on an epitaxial region including silicon and either germanium or carbon. In the method, a gate electrode is formed on a semiconductor substrate with a gate insulating layer interposed therebetween. An epitaxial layer is formed in the semiconductor substrate at both sides of the gate electrodes. A silicon layer is formed to cap the epitaxial layer. The silicon layer and a metal material are reacted to form a silicide layer. In a PMOS, the epitaxial layer has a top surface and inclined side surfaces that are exposed above the upper surface of the active region. The silicon layer is grown on the epitaxial layer in such a way as to cap the top and inclined surfaces.

公开(公告)号：US20150031183A1

公开(公告)日：2015-01-29

申请号：US14485035

申请日：2014-09-12

申请人： SAMSUNG ELECTRONICS CO., LTD.

发明人： Sungkwan Kang ,  Keum Seok Park ,  Byeongchan Lee ,  Sangbom Kang ,  Nam-Kyu Kim

IPC分类号： H01L29/66

CPC分类号： H01L29/7848 ,  H01L21/0245 ,  H01L21/02532 ,  H01L21/0262 ,  H01L21/02639 ,  H01L21/823807 ,  H01L21/823814 ,  H01L29/0847 ,  H01L29/4975 ,  H01L29/51 ,  H01L29/518 ,  H01L29/665 ,  H01L29/66507 ,  H01L29/66545 ,  H01L29/66628 ,  H01L29/66636

摘要： A semiconductor device has a silicide source/drain region is fabricated by growing silicon on an epitaxial region including silicon and either germanium or carbon. In the method, a gate electrode is formed on a semiconductor substrate with a gate insulating layer interposed therebetween. An epitaxial layer is formed in the semiconductor substrate at both sides of the gate electrodes. A silicon layer is formed to cap the epitaxial layer. The silicon layer and a metal material are reacted to form a silicide layer. In a PMOS, the epitaxial layer has a top surface and inclined side surfaces that are exposed above the upper surface of the active region. The silicon layer is grown on the epitaxial layer in such a way as to cap the top and inclined surfaces.

摘要翻译： 通过在包括硅和锗或锗的外延区域上生长硅来制造具有硅化物源极/漏极区的半导体器件。 在该方法中，在半导体衬底上形成有栅极绝缘层的栅电极。 在栅极两侧的半导体衬底中形成外延层。 形成硅层来覆盖外延层。 硅层和金属材料反应形成硅化物层。 在PMOS中，外延层具有暴露在有源区的上表面上方的顶表面和倾斜侧表面。 硅层在外延层上生长，以覆盖顶部和倾斜表面。

公开(公告)号：US10790133B2

公开(公告)日：2020-09-29

申请号：US15416408

申请日：2017-01-26

申请人： Samsung Electronics Co., Ltd.

发明人： Keum Seok Park ,  Sun Jung Kim ,  Yi Hwan Kim ,  Pan Kwi Park ,  Dong Suk Shin ,  Hyun Kwan Yu ,  Seung Hun Lee

IPC分类号： B08B7/00 ,  B08B7/04 ,  H01L21/02 ,  H01L21/67 ,  H01L21/687 ,  H01L29/66 ,  H01J37/32 ,  H01L21/683 ,  H01L29/78 ,  H01L29/165

摘要： A precleaning apparatus includes a chamber having an internal space in which a substrate is cleaned, a substrate support disposed in the chamber and configured to support the substrate, a plasma generation unit disposed in the chamber and configured to generate plasma gas, a heating unit configured to heat the substrate on the substrate support, a cleaning gas supply unit configured to supply gas for oxide etching to the internal space of the chamber, and a hydrogen gas supply unit configured to supply hydrogen gas to the internal space of the chamber.

公开(公告)号：US10756211B2

公开(公告)日：2020-08-25

申请号：US15379190

申请日：2016-12-14

申请人： Samsung Electronics Co., Ltd.

发明人： Keum Seok Park ,  Jungho Yoo ,  Jinyeong Joe ,  Bonyoung Koo ,  Dongsuk Shin ,  Hongsik Yoon ,  Byeongchan Lee

IPC分类号： H01L29/78 ,  H01L29/165 ,  H01L29/66 ,  H01L21/02 ,  H01L29/06 ,  H01L29/08 ,  H01L29/45

摘要： A semiconductor device includes an active pattern protruding from a substrate, a gate structure crossing over the active pattern, and source/drain regions disposed on the active pattern at opposite sides of the gate structure. Each of the source/drain regions includes a first epitaxial pattern contacting the active pattern and a second epitaxial pattern on the first epitaxial pattern. The first epitaxial pattern comprises a material having a lattice constant which is the same as that of the substrate, and the second epitaxial pattern comprises a material having a lattice constant greater than that of the first epitaxial pattern.

公开(公告)号：US20190309415A1

公开(公告)日：2019-10-10

申请号：US16200149

申请日：2018-11-26

申请人： SAMSUNG ELECTRONICS CO., LTD.

发明人： Yeonock Han ,  Wonwoong Chung ,  Keum Seok Park ,  Pankwi Park ,  Jeongho Yoo ,  Younjoung Cho ,  Byung Koo Kong ,  Mijeong Kim ,  Jin Wook Lee ,  Changeun Jang

IPC分类号： C23C16/448 ,  H01L21/02

摘要： A method of manufacturing a semiconductor device includes disposing a gas-storage cylinder storing monochlorosilane within a gas supply unit. The monochlorosilane is supplied from the gas-storage cylinder into a process chamber to form a silicon containing layer therein. The gas-storage cylinder includes manganese.

公开(公告)号：US09553190B2

公开(公告)日：2017-01-24

申请号：US14673519

申请日：2015-03-30

申请人： SAMSUNG ELECTRONICS CO., LTD.

发明人： Keum Seok Park ,  Jungho Yoo ,  Jinyeong Joe ,  Bonyoung Koo ,  Dongsuk Shin ,  Hongsik Yoon ,  Byeongchan Lee

IPC分类号： H01L29/772 ,  H01L29/417 ,  H01L29/78 ,  H01L29/66 ,  H01L29/165

CPC分类号： H01L29/7848 ,  H01L21/02532 ,  H01L21/02636 ,  H01L29/0649 ,  H01L29/0847 ,  H01L29/165 ,  H01L29/45 ,  H01L29/66545 ,  H01L29/785

摘要： A semiconductor device includes an active pattern protruding from a substrate, a gate structure crossing over the active pattern, and source/drain regions disposed on the active pattern at opposite sides of the gate structure. Each of the source/drain regions includes a first epitaxial pattern contacting the active pattern and a second epitaxial pattern on the first epitaxial pattern. The first epitaxial pattern comprises a material having a lattice constant which is the same as that of the substrate, and the second epitaxial pattern comprises a material having a lattice constant greater than that of the first epitaxial pattern.

摘要翻译： 半导体器件包括从衬底突出的有源图案，在有源图案上交叉的栅极结构以及设置在栅极结构的相对侧上的有源图案上的源极/漏极区域。 源极/漏极区域中的每一个包括接触有源图案的第一外延图案和第一外延图案上的第二外延图案。 第一外延图案包括具有与衬底相同的晶格常数的材料，并且第二外延图案包括具有大于第一外延图案的晶格常数的晶格常数的材料。

公开(公告)号：US10170622B2

公开(公告)日：2019-01-01

申请号：US15619882

申请日：2017-06-12

申请人： SAMSUNG ELECTRONICS CO., LTD.

发明人： Sungkwan Kang ,  Keum Seok Park ,  Byeongchan Lee ,  Sangbom Kang ,  Nam-Kyu Kim

IPC分类号： H01L29/78 ,  H01L29/66 ,  H01L21/02 ,  H01L21/8238 ,  H01L29/08 ,  H01L29/49 ,  H01L29/51 ,  H01L21/335

摘要： A semiconductor device has a silicide source/drain region is fabricated by growing silicon on an epitaxial region including silicon and either germanium or carbon. In the method, a gate electrode is formed on a semiconductor substrate with a gate insulating layer interposed therebetween. An epitaxial layer is formed in the semiconductor substrate at both sides of the gate electrodes. A silicon layer is formed to cap the epitaxial layer. The silicon layer and a metal material are reacted to form a silicide layer. In a PMOS, the epitaxial layer has a top surface and inclined side surfaces that are exposed above the upper surface of the active region. The silicon layer is grown on the epitaxial layer in such a way as to cap the top and inclined surfaces.