Invention Grant
- Patent Title: Rough anti-stiction layer for MEMS device
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Application No.: US16229902Application Date: 2018-12-21
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Publication No.: US10759654B2Publication Date: 2020-09-01
- Inventor: Yu-Jui Chen , I-Shi Wang , Ren-Dou Lee , Jen-Hao Liu
- Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Eschweiler & Potashnik, LLc
- Main IPC: B81B3/00
- IPC: B81B3/00 ; B81C1/00

Abstract:
The present disclosure relates to a method for manufacturing a microelectromechanical systems (MEMS) package. The method comprises providing a CMOS IC including CMOS devices arranged within a CMOS substrate. The method further comprises forming and patterning a metal layer over the CMOS substrate to form an anti-stiction layer and a fixed electrode plate and forming a rough top surface for the anti-stiction layer. The method further comprises providing a MEMS IC comprising a moveable mass arranged within a recess of a MEMS substrate and bonding the CMOS IC to the MEMS IC to enclose a cavity between the moveable mass and the fixed electrode plate and the anti-stiction layer.
Public/Granted literature
- US20190119099A1 ROUGH ANTI-STICTION LAYER FOR MEMS DEVICE Public/Granted day:2019-04-25
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