- Patent Title: Vertical semiconductor devices and method of manufacturing the same
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Application No.: US16243338Application Date: 2019-01-09
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Publication No.: US10763167B2Publication Date: 2020-09-01
- Inventor: Kyung-Hwan Lee , Chang-Seok Kang , Yong-Seok Kim , Jun-Hee Lim , Kohji Kanamori
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR Samsung-ro, Yeongtong-gu, Suwon-si, Gyeonggi-do
- Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee Address: KR Samsung-ro, Yeongtong-gu, Suwon-si, Gyeonggi-do
- Agency: Muir Patent Law, PLLC
- Priority: com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@40089978
- Main IPC: H01L21/768
- IPC: H01L21/768 ; H01L23/522 ; H01L27/115 ; H01L21/3213 ; H01L21/311

Abstract:
A vertical semiconductor device includes a conductive pattern structure in which insulation patterns and conductive patterns alternately and repeatedly stacked on the substrate. The conductive pattern structure includes an edge portion having a stair-stepped shape. Each of the conductive patterns includes a pad region corresponding to an upper surface of a stair in the edge portion. A pad conductive pattern is disposed to contact a portion of an upper surface of the pad region. A mask pattern is disposed on an upper surface of the pad conductive pattern. A contact plug penetrates the mask pattern to contact the pad conductive pattern.
Public/Granted literature
- US20190363014A1 VERTICAL SEMICONDUCTOR DEVICES AND METHOD OF MANUFACTURING THE SAME Public/Granted day:2019-11-28
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