- 专利标题： Semiconductor device structure
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申请号： US16196642申请日： 2018-11-20
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公开(公告)号： US10763178B2公开(公告)日： 2020-09-01
- 发明人: Ming-Heng Tsai , Chun-Sheng Liang , Pei-Lin Wu , Yi-Ren Chen , Shih-Hsun Chang
- 申请人： TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- 申请人地址： TW Hsinchu
- 专利权人： Taiwan Semiconductor Manufacturing Co., Ltd.
- 当前专利权人： Taiwan Semiconductor Manufacturing Co., Ltd.
- 当前专利权人地址： TW Hsinchu
- 代理机构： Birch, Stewart, Kolasch & Birch, LLP
- 主分类号： H01L29/78
- IPC分类号： H01L29/78 ; H01L21/8238 ; H01L29/08 ; H01L29/161 ; H01L29/16 ; H01L29/165 ; H01L29/24 ; H01L29/267 ; H01L21/8234 ; H01L29/423 ; H01L29/49
摘要：
A semiconductor device structure is provided. The semiconductor device structure includes a substrate. The semiconductor device structure includes a gate stack over the substrate. The gate stack has a first upper portion and a first lower portion, and the first upper portion is wider than the first lower portion. The semiconductor device structure includes a spacer layer surrounding the gate stack. The spacer layer has a second upper portion and a second lower portion. The second upper portion is thinner than the second lower portion.
公开/授权文献
- US20190109051A1 SEMICONDUCTOR DEVICE STRUCTURE 公开/授权日：2019-04-11
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