Invention Grant
- Patent Title: Non-volatile memory device
-
Application No.: US16048786Application Date: 2018-07-30
-
Publication No.: US10770149B2Publication Date: 2020-09-08
- Inventor: Ji-yeon Shin , Jeong-don Ihm , Byung-hoon Jeong , Jung-june Park
- Applicant: SAMSUNG ELECTRONICS CO., LTD.
- Applicant Address: KR Suwon-si, Gyeonggi-do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Suwon-si, Gyeonggi-do
- Agency: Lee IP Law, PC
- Priority: com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@3c1b0bd2
- Main IPC: G11C16/26
- IPC: G11C16/26 ; G11C16/04 ; G11C16/30 ; G11C16/32

Abstract:
A non-volatile memory device includes an output driver to output a data signal. The output driver includes a pull-up driver and a pull-down driver. The pull-up driver includes a first pull-up driver having a plurality of P-type transistors and a second pull-up driver having a plurality of N-type transistors. The pull-down driver includes a plurality of N-type transistors. One or more power supply voltages having different voltage levels are selectively applied to the pull-up driver. A first power supply voltage is applied to the first pull-up driver, and a second power supply voltage is applied to the second pull-up driver.
Public/Granted literature
- US20190139613A1 NON-VOLATILE MEMORY DEVICE Public/Granted day:2019-05-09
Information query