Invention Grant
- Patent Title: Configuration of a memory device for programming memory cells
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Application No.: US16655826Application Date: 2019-10-17
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Publication No.: US10777277B2Publication Date: 2020-09-15
- Inventor: Violante Moschiano , Purval S. Sule , Han Liu , Andrea D'Alessandro , Pranav Kalavade , Han Zhao , Shantanu Rajwade
- Applicant: MICRON TECHNOLOGY, INC.
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Dicke, Billig & Czaja, PLLC
- Main IPC: G11C16/12
- IPC: G11C16/12 ; G11C11/4074 ; G11C16/04 ; G11C16/34 ; G11C5/06

Abstract:
Memories having a controller configured to perform methods during programming operations including applying a first voltage level to first and second data lines while applying a second, lower, voltage level to first and second select gates connected between the data lines and respective strings of memory cells; decreasing a voltage level of the first data line to a third voltage level; increasing a voltage level of the first select gate to a fourth voltage level; applying a fifth voltage level, higher than the first voltage level, to first and second access lines coupled to memory cells of the strings of memory cells; and increasing a voltage level of the first access line to a sixth voltage level.
Public/Granted literature
- US20200066350A1 CONFIGURATION OF A MEMORY DEVICE FOR PROGRAMMING MEMORY CELLS Public/Granted day:2020-02-27
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