Invention Grant
- Patent Title: Semiconductor device having boron-doped germanium tin epitaxy structure and method for forming the same
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Application No.: US16150182Application Date: 2018-10-02
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Publication No.: US10777663B2Publication Date: 2020-09-15
- Inventor: Chung-En Tsai , Fang-Liang Lu , Pin-Shiang Chen , Chee-Wee Liu
- Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. , NATIONAL TAIWAN UNIVERSITY
- Applicant Address: TW Hsinchu TW Taipei
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.,NATIONAL TAIWAN UNIVERSITY
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.,NATIONAL TAIWAN UNIVERSITY
- Current Assignee Address: TW Hsinchu TW Taipei
- Agency: Maschoff Brennan
- Main IPC: H01L29/66
- IPC: H01L29/66 ; H01L29/167 ; H01L21/223 ; H01L21/3065 ; H01L29/78 ; H01L29/45 ; H01L21/3105 ; H01L21/02 ; H01L29/165 ; H01L29/08
Abstract:
A method includes forming a fin structure over a substrate; forming a source/drain structure adjoining the fin structure, in which the source/drain structure includes tin; and exposing the source/drain structure to a boron-containing gas to diffuse boron into the source/drain structure to form a doped region in the source/drain structure.
Public/Granted literature
- US20190165141A1 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF Public/Granted day:2019-05-30
Information query
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