- Patent Title: Bipolar junction transistors with a self-aligned emitter and base
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Application No.: US16106344Application Date: 2018-08-21
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Publication No.: US10777668B2Publication Date: 2020-09-15
- Inventor: Vibhor Jain , John J. Pekarik , Qizhi Liu , Pernell Dongmo
- Applicant: GLOBALFOUNDRIES Inc.
- Applicant Address: KY Grand Cayman
- Assignee: GLOBALFOUNDRIES INC.
- Current Assignee: GLOBALFOUNDRIES INC.
- Current Assignee Address: KY Grand Cayman
- Agency: Thompson Hine LLP
- Agent Anthony Canale
- Main IPC: H01L29/732
- IPC: H01L29/732 ; H01L29/08 ; H01L29/06
Abstract:
Device structures and fabrication methods for a bipolar junction transistor. A trench isolation region surrounds an active region that includes a collector. A base layer is arranged over the active region, and a semiconductor layer is arranged on the base layer. The semiconductor layer includes a stepped profile with a first section having a first width adjacent to the base layer and a second section having a second width that is less than the first width. An emitter is arranged on the second section of the semiconductor layer.
Public/Granted literature
- US20200066885A1 BIPOLAR JUNCTION TRANSISTORS WITH A SELF-ALIGNED EMITTER AND BASE Public/Granted day:2020-02-27
Information query
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