Invention Grant
- Patent Title: Heterojunction bipolar transistor
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Application No.: US16152285Application Date: 2018-10-04
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Publication No.: US10777669B2Publication Date: 2020-09-15
- Inventor: Yasunari Umemoto , Shigeki Koya , Isao Obu
- Applicant: Murata Manufacturing Co., Ltd.
- Applicant Address: JP Kyoto-fu
- Assignee: Murata Manufacturing Co., Ltd.
- Current Assignee: Murata Manufacturing Co., Ltd.
- Current Assignee Address: JP Kyoto-fu
- Agency: Studebaker & Brackett PC
- Priority: com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@595867f0
- Main IPC: H01L29/737
- IPC: H01L29/737 ; H01L29/205 ; H01L29/08 ; H01L29/10 ; H01L29/66 ; H01L21/285 ; H01L21/308 ; H01L21/306 ; H03F3/21
Abstract:
A heterojunction bipolar transistor includes a collector layer, a base layer, and an emitter layer that are stacked on a substrate. The collector layer includes a graded semiconductor layer in which an electron affinity increases from a side closer to the base layer toward a side farther from the base layer. An electron affinity of the base layer at an interface closer to the collector layer is equal to an electron affinity of the graded semiconductor layer at an interface closer to the base layer.
Public/Granted literature
- US20190115457A1 HETEROJUNCTION BIPOLAR TRANSISTOR Public/Granted day:2019-04-18
Information query
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