- 专利标题: Atomic layer etching using a combination of plasma and vapor treatments
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申请号: US16289428申请日: 2019-02-28
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公开(公告)号: US10784118B2公开(公告)日: 2020-09-22
- 发明人: Andreas Fischer , Thorsten Lill , Richard Janek , John Boniface
- 申请人: Lam Research Corporation
- 申请人地址: US CA Fremont
- 专利权人: Lam Research Corporation
- 当前专利权人: Lam Research Corporation
- 当前专利权人地址: US CA Fremont
- 代理机构: Penilla IP, APC
- 主分类号: C23C16/02
- IPC分类号: C23C16/02 ; C23F1/00 ; C23F1/12 ; C23F4/00 ; H01J37/32 ; H01L21/02 ; H01L21/3065 ; H01L21/311 ; H01L21/3213
摘要:
A method for performing atomic layer etching (ALE) on a substrate, including the following method operations: performing a surface modification operation on a surface of the substrate, the surface modification operation configured to convert at least one monolayer of the substrate surface to a modified layer; performing a removal operation on the substrate surface, to remove the modified layer from the substrate surface, wherein removing the modified layer includes exposing the substrate surface to a metal complex, such that a ligand exchange reaction occurs between the metal complex and converted species of the modified layer; performing, following the removal operation, a plasma treatment on the substrate surface, the plasma treatment configured to remove residues formed from the exposure of the substrate surface to the metal complex, wherein the residues are volatilized by the plasma treatment; repeating the foregoing operations until a predefined thickness has been etched from the substrate surface.