In accordance with an embodiment, a method for producing a buried cavity structure includes providing a mono-crystalline semiconductor substrate, producing a doped volume region in the mono-crystalline semiconductor substrate, wherein the doped volume region has an increased etching rate for a first etchant by comparison with an adjoining, undoped or more lightly doped material of the monocrystalline semiconductor substrate, forming an access opening to the doped volume region, and removing the doped semiconductor material in the doped volume region using the first etchant through the access opening to obtain the buried cavity structure.