Invention Grant
- Patent Title: Doped tantalum nitride for copper barrier applications
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Application No.: US13689871Application Date: 2012-11-30
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Publication No.: US10784157B2Publication Date: 2020-09-22
- Inventor: Annamalai Lakshmanan , Paul F. Ma , Mei Chang , Jennifer Shan
- Applicant: Applied Materials, Inc.
- Applicant Address: US CA Santa Clara
- Assignee: Applied Materials, Inc.
- Current Assignee: Applied Materials, Inc.
- Current Assignee Address: US CA Santa Clara
- Agency: Servilla Whitney LLC
- Main IPC: H01L21/768
- IPC: H01L21/768 ; H01L23/538 ; H01L21/285 ; H01L23/532
Abstract:
Described are doped TaN films, as well as methods for providing the doped TaN films. Doping TaN films with Ru, Cu, Co, Mn, Al, Mg, Cr, Nb, Ti and/or V allows for enhanced copper barrier properties of the TaN films. Also described are methods of providing films with a first layer comprising doped TaN and a second layer comprising one or more of Ru and Co, with optional doping of the second layer.
Public/Granted literature
- US20130140698A1 Doped Tantalum Nitride for Copper Barrier Applications Public/Granted day:2013-06-06
Information query
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