公开(公告)号：US10784157B2

公开(公告)日：2020-09-22

申请号：US13689871

申请日：2012-11-30

Applicant: Applied Materials, Inc.

Inventor： Annamalai Lakshmanan ,  Paul F. Ma ,  Mei Chang ,  Jennifer Shan

IPC: H01L21/768 ,  H01L23/538 ,  H01L21/285 ,  H01L23/532

Abstract: Described are doped TaN films, as well as methods for providing the doped TaN films. Doping TaN films with Ru, Cu, Co, Mn, Al, Mg, Cr, Nb, Ti and/or V allows for enhanced copper barrier properties of the TaN films. Also described are methods of providing films with a first layer comprising doped TaN and a second layer comprising one or more of Ru and Co, with optional doping of the second layer.