Invention Grant
- Patent Title: Single diffusion breaks formed with liner protection for source and drain regions
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Application No.: US16385197Application Date: 2019-04-16
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Publication No.: US10784342B1Publication Date: 2020-09-22
- Inventor: Wei Hong , Hong Yu , Jianwei Peng , Hui Zhan
- Applicant: GLOBALFOUNDRIES Inc.
- Applicant Address: KY Grand Cayman
- Assignee: GLOBALFOUNDRIES INC.
- Current Assignee: GLOBALFOUNDRIES INC.
- Current Assignee Address: KY Grand Cayman
- Agency: Thompson Hine LLP
- Agent Francois Pagette
- Main IPC: H01L29/06
- IPC: H01L29/06 ; H01L29/78 ; H01L27/088 ; H01L21/8234 ; H01L21/762 ; H01L29/66
Abstract:
Structures that include a single diffusion break and methods of forming a single diffusion break. A source/drain region is arranged inside a first cavity in a semiconductor fin, and a dielectric layer is arranged inside a second cavity in the semiconductor fin. A liner, which is composed of a dielectric material, includes a section that is arranged inside the second cavity laterally between the dielectric layer and the source/drain region.
Information query
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