Invention Grant
- Patent Title: Extrinsic base doping for bipolar junction transistors
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Application No.: US16516815Application Date: 2019-07-19
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Publication No.: US10784346B2Publication Date: 2020-09-22
- Inventor: Renata Camillo-Castillo , David L. Harame , Qizhi Liu
- Applicant: International Business Machines Corporation
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agency: Sherman IP LLP
- Agent Kenneth L. Sherman; Steven Laut
- Main IPC: H01L29/10
- IPC: H01L29/10 ; H01L21/225 ; H01L21/324 ; H01L29/06 ; H01L29/08 ; H01L29/66 ; H01L29/737 ; H01L29/732
Abstract:
A method includes forming a base layer on a top surface of a substrate. A dielectric layer is formed on exposed surfaces of the base layer. A hardmask layer is formed on the base layer and the dielectric layer. A pattern is formed from the hardmask with a first opening and a second opening. Portions of a dielectric layer are removed from the top surface of the base layer at positions consistent with the pattern of the first opening and the second opening to form exposed surfaces defined as a first window and a second window in the dielectric layer. Deposits of a dopant-containing layer are limited on the exposed surfaces of: a first portion on the top surface of the base layer inside of the first window, and a second portion on the top surface of the base layer inside of the second window.
Public/Granted literature
- US20190341455A1 EXTRINSIC BASE DOPING FOR BIPOLAR JUNCTION TRANSISTORS Public/Granted day:2019-11-07
Information query
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