Invention Grant
- Patent Title: Porous semiconductor handle substrate
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Application No.: US15669704Application Date: 2017-08-04
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Publication No.: US10784348B2Publication Date: 2020-09-22
- Inventor: Stephen Alan Fanelli , Richard Hammond
- Applicant: QUALCOMM Incorporated
- Applicant Address: US CA San Diego
- Assignee: QUALCOMM Incorporated
- Current Assignee: QUALCOMM Incorporated
- Current Assignee Address: US CA San Diego
- Agency: Qualcomm Incorporated
- Main IPC: H01L29/10
- IPC: H01L29/10 ; H01L23/31 ; H01L21/02 ; H01L21/78 ; H01L27/12 ; H01L21/20 ; H01L21/306 ; H01L21/683 ; H01L21/762 ; H01L21/84 ; H01L23/528 ; H01L23/00 ; H01L29/78
Abstract:
An integrated circuit (IC) may include an active device layer on a front-side surface of a semiconductor device substrate. The IC may also include a front-side dielectric layer having a first surface opposite a second surface, the first surface contacting the active device layer. The IC may further include a porous semiconductor handle substrate contacting the second surface of the front-side dielectric layer. The porous semiconductor handle substrate may be uniformly doped.
Public/Granted literature
- US20180277632A1 POROUS SEMICONDUCTOR HANDLE SUBSTRATE Public/Granted day:2018-09-27
Information query
IPC分类:
