Invention Grant
- Patent Title: Backside contact structures and fabrication for metal on both sides of devices
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Application No.: US15747119Application Date: 2015-09-25
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Publication No.: US10784358B2Publication Date: 2020-09-22
- Inventor: Patrick Morrow , Rishabh Mehandru , Aaron D. Lilak , Kimin Jun
- Applicant: Intel Corporation
- Applicant Address: US CA Santa Clara
- Assignee: Intel Corporation
- Current Assignee: Intel Corporation
- Current Assignee Address: US CA Santa Clara
- Agency: Schwabe, Williamson & Wyatt, P.C.
- International Application: PCT/US2015/052440 WO 20150925
- International Announcement: WO2017/052638 WO 20170330
- Main IPC: H01L29/417
- IPC: H01L29/417 ; H01L29/423 ; H01L27/12 ; H01L29/78 ; H01L29/66 ; H01L21/8234 ; H01L29/08 ; H01L29/40 ; H01L21/225 ; H01L21/265

Abstract:
An apparatus including a circuit structure including a device stratum including a plurality of devices including a first side and an opposite second side; and a metal interconnect coupled to at least one of the plurality of devices from the second side of the device stratum. A method including forming a transistor device including a channel between a source region and a drain region and a gate electrode on the channel defining a first side of the device; and forming an interconnect to one of the source region and the drain region from a second side of the device.
Public/Granted literature
- US20180219075A1 BACKSIDE CONTACT STRUCTURES AND FABRICATION FOR METAL ON BOTH SIDES OF DEVICES Public/Granted day:2018-08-02
Information query
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