Invention Grant
- Patent Title: Vertical FET devices including a contact on protruding portions of a substrate
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Application No.: US16275675Application Date: 2019-02-14
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Publication No.: US10790368B2Publication Date: 2020-09-29
- Inventor: Young Chai Jung , Myung Gil Kang , Kang Ill Seo , Seon Bae Kim , Yong Hee Park
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR
- Agency: Myers Bigel, P.A.
- Main IPC: H01L29/417
- IPC: H01L29/417 ; H01L29/78 ; H01L29/45 ; H01L29/66 ; H01L23/522
Abstract:
VFET devices are provided. A VFET device includes a substrate including first and second protruding portions. The VFET device includes an isolation region between the first and second protruding portions. The VFET device includes first and second silicide regions on the first and second protruding portions, respectively. Moreover, the VFET device includes a contact on the first and second silicide regions. Related methods of forming a VFET device are also provided.
Public/Granted literature
- US20190355822A1 VERTICAL FET DEVICES INCLUDING A CONTACT ON PROTRUDING PORTIONS OF A SUBSTRATE Public/Granted day:2019-11-21
Information query
IPC分类:
