Invention Grant
- Patent Title: Semiconductor device and method of manufacturing the same
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Application No.: US16716384Application Date: 2019-12-16
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Publication No.: US10797051B2Publication Date: 2020-10-06
- Inventor: Yoonjae Kim , Cheol Kim , Yong-Hoon Son , Jin-Hyuk Yoo , Woojin Jung
- Applicant: SAMSUNG ELECTRONICS CO., LTD.
- Applicant Address: KR Suwon-si, Gyeonggi-do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Suwon-si, Gyeonggi-do
- Agency: Volentine, Whitt & Francos, PLLC
- Priority: com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@6e8f49bd
- Main IPC: H01L29/16
- IPC: H01L29/16 ; H01L21/02 ; H01L27/088 ; H01L21/8234 ; H01L23/485 ; H01L21/768 ; H01L21/306 ; H01L21/311 ; H01L27/02 ; H01L29/06 ; H01L29/08 ; H01L29/10 ; H01L29/423 ; H01L29/66 ; H01L29/78 ; H01L21/8238 ; H01L29/165
Abstract:
A semiconductor device includes a substrate having an active pattern, a conductive pattern crossing the active pattern, a spacer structure on at least one side surface of the conductive pattern, and a capping structure on the conductive pattern. The capping structure includes a first capping pattern and a second capping pattern. The second capping pattern is disposed on a top surface of the first capping pattern and a top surface of the spacer structure.
Public/Granted literature
- US20200119009A1 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME Public/Granted day:2020-04-16
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