The disclosed technology generally relates to magnetoresistive devices, and more particularly to a magnetic tunnel junction (MTJ) device formed in an interconnection structure, and to a method of integrating the (MTJ) device in the interconnection structure. According to an aspect, a device includes a first interconnection level including a first dielectric layer and a first set of conductive paths arranged in the first dielectric layer, a second interconnection level arranged on the first connection level and including a second dielectric layer and a second set of conductive paths arranged in the second dielectric layer, and a third interconnection level arranged on the second interconnection level and including a third dielectric layer and a third set of conductive paths arranged in the third dielectric layer. The device additionally includes a magnetic tunnel junction (MTJ) device including a bottom layer, a top layer and an MTJ structure arranged between the bottom layer and the top layer, wherein the bottom layer is connected to a bottom layer contact portion of the first set of conductive paths and the top layer is connected to a top layer contact portion of the second or third set of conductive paths. The device further includes a multi-level via extending through the second dielectric layer and the third dielectric layer, between a first via contact portion of the first set of conductive paths and a second via contact portion of the third set of conductive paths, wherein a height of the MTJ device corresponds to, or-is less than, a height of the multi-level via, e.g., wherein the height of the MTJ device corresponds to or is less than a height of the second interconnection level.