In the examples provided herein, an apparatus has a memristive element coupled to a pin of an integrated circuit, wherein the memristive element switches from a first resistance within a first range of resistance values to a second resistance within a second range of resistance values in response to an electrostatic discharge (ESD) event at the pin. The apparatus also has read circuitry coupled to the memristive element to determine whether a resistance of the memristive element is in the first or second range of resistance values, wherein the read circuitry includes a first transistor. Further, the coupling between the read circuitry and the memristive element does not include a direct path for current from the ESD event to a gate terminal of the first transistor.