公开(公告)号：US10811065B2

公开(公告)日：2020-10-20

申请号：US15568458

申请日：2015-06-05

Applicant: Hewlett Packard Enterprise Development LP

Inventor： Brent Buchanan ,  Ning Ge ,  Richard James Auletta

IPC: G11C7/24 ,  G11C29/50 ,  G11C13/00 ,  G11C5/06 ,  H02H1/00 ,  H02H9/04

Abstract: In the examples provided herein, an apparatus has a memristive element coupled to a pin of an integrated circuit, wherein the memristive element switches from a first resistance within a first range of resistance values to a second resistance within a second range of resistance values in response to an electrostatic discharge (ESD) event at the pin. The apparatus also has read circuitry coupled to the memristive element to determine whether a resistance of the memristive element is in the first or second range of resistance values, wherein the read circuitry includes a first transistor. Further, the coupling between the read circuitry and the memristive element does not include a direct path for current from the ESD event to a gate terminal of the first transistor.

公开(公告)号：US09847128B2

公开(公告)日：2017-12-19

申请号：US15311594

申请日：2014-06-20

Applicant: Hewlett Packard Enterprise Development LP

Inventor： Brent Buchanan ,  Richard James Auletta

IPC: G11C11/00 ,  G11C13/00

CPC classification number: G11C13/0059 ,  G11C13/0002 ,  G11C13/0064 ,  G11C13/0069

Abstract: In the examples provided herein, a voltage driver module applies an increasing voltage to a memristive memory cell until a resistance of the cell switches to a target resistance. A monitoring module monitors a switching voltage at which the resistance of the cell switches to the target resistance, or an application duration of the increasing voltage to the cell. Additionally, a controller performs an action to protect data stored by the cell upon determining that the switching voltage exceeds a target voltage.

公开(公告)号：US20170140817A1

公开(公告)日：2017-05-18

申请号：US15311594

申请日：2014-06-20

Applicant: HEWLETT PACKARD ENTERPRISE DEVELOPMENT LP

Inventor： Brent Buchanan ,  Richard James Auletta

IPC: G11C13/00

CPC classification number: G11C13/0059 ,  G11C13/0002 ,  G11C13/0064 ,  G11C13/0069

Abstract: In the examples provided herein, a voltage driver module applies an increasing voltage to a memristive memory cell until a resistance of the cell switches to a target resistance. A monitoring module monitors a switching voltage at which the resistance of the cell switches to the target resistance, or an application duration of the increasing voltage to the cell. Additionally, a controller performs an action to protect data stored by the cell upon determining that the switching voltage exceeds a target voltage.