Invention Grant
- Patent Title: Memory cell state in a valley between adjacent data states
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Application No.: US15987414Application Date: 2018-05-23
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Publication No.: US10811090B2Publication Date: 2020-10-20
- Inventor: Sivagnanam Parthasarathy , Patrick R. Khayat , Mustafa N. Kaynak , Robert B. Eisenhuth
- Applicant: Micron Technology, Inc.
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Brooks, Cameron & Huebsch, PLLC
- Main IPC: G11C16/26
- IPC: G11C16/26 ; G11C11/56 ; G11C16/06 ; G11C16/34 ; G06F11/10 ; G11C16/04 ; G11C29/52
Abstract:
A memory cell can have a state in a valley between adjacent data states. A determination can be made whether a state of a memory cell is in a valley between adjacent distributions of states associated with respective data states. A signal indicative of a data state of the memory cell and whether the state of the memory cell is in the valley can be transmitted.
Public/Granted literature
- US20180268896A1 MEMORY CELL STATE IN A VALLEY BETWEEN ADJACENT DATA STATES Public/Granted day:2018-09-20
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