Invention Grant
- Patent Title: Method for improving the quality of a high-voltage metal oxide semiconductor
-
Application No.: US16450984Application Date: 2019-06-24
-
Publication No.: US10811258B1Publication Date: 2020-10-20
- Inventor: Tsung-Hsun Tsai
- Applicant: UNITED MICROELECTRONICS CORP.
- Applicant Address: TW Hsin-Chu
- Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee Address: TW Hsin-Chu
- Agent Winston Hsu
- Main IPC: H01L21/033
- IPC: H01L21/033 ; H01L29/78 ; H01L21/28 ; H01L29/66 ; H01L29/06

Abstract:
The present invention provides a method for improving the quality of a high-voltage metal oxide semiconductor (HV MOS), the method includes: firstly, a substrate is provided, next, a hard mask layer is formed on the substrate, an oxygen plasma treatment is then performed to the hard mask layer, so as to form an oxide layer on the hard mask layer. Afterwards, a patterned photoresist layer is formed on the oxide layer, and a first cleaning process is performed to a top surface of the oxide layer after the patterned photoresist layer is formed, wherein the first cleaning process comprises rinsing the oxide layer with carbonated water. Next, a first etching process is performed to remove parts of the hard mask layer, and the patterned photoresist layer is then removed. Afterwards, a second etching process is performed, to remove the oxide layer.
Information query
IPC分类: