Invention Grant
- Patent Title: Semiconductor device having a uniform and thin silicide layer on an epitaxial source/ drain structure and manufacturing method thereof
-
Application No.: US14996031Application Date: 2016-01-14
-
Publication No.: US10811262B2Publication Date: 2020-10-20
- Inventor: Kai-Hsuan Lee , Jyh-Cherng Sheu , Sung-Li Wang , Cheng-Yu Yang , Sheng-Chen Wang , Sai-Hooi Yeong
- Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Applicant Address: TW Hsinchu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee Address: TW Hsinchu
- Agency: McDermott Will & Emery LLP
- Main IPC: H01L21/768
- IPC: H01L21/768 ; H01L21/285 ; H01L29/66 ; H01L29/06 ; H01L29/08 ; H01L29/417 ; H01L23/485
Abstract:
In a method of manufacturing a semiconductor device, a first layer containing an amorphous first material is formed by a deposition process over a semiconductor layer. A second layer containing a metal second material is formed over the first layer. A thermal process is performed to form an alloy layer of the amorphous first material and the metal second material.
Public/Granted literature
- US20170207095A1 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF Public/Granted day:2017-07-20
Information query
IPC分类:
