Invention Grant
- Patent Title: Method of forming stacked structure of memory
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Application No.: US16261578Application Date: 2019-01-30
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Publication No.: US10811272B2Publication Date: 2020-10-20
- Inventor: Wei-Hsin Liu , Ta-Wei Chiu , Chia-Lung Chang , Po-Chun Chen , Hong-Yi Fang , Yi-Wei Chen
- Applicant: UNITED MICROELECTRONICS CORP.
- Applicant Address: TW Hsin-Chu
- Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee Address: TW Hsin-Chu
- Agent Winston Hsu
- Priority: com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@3e77e0be
- Main IPC: H01L21/3105
- IPC: H01L21/3105 ; H01L21/027 ; H01L21/02 ; H01L21/311 ; H01L21/3213 ; H01L27/108 ; H01L29/66

Abstract:
A method of forming a dielectric layer includes the following steps. A substrate including a first area and a second area is provided. A plurality of patterns on the substrate of the first area and a blanket stacked structure on the substrate of the second area are formed. An organic dielectric layer covers the patterns, the blanket stacked structure and the substrate. The blanket stacked structure is patterned by serving the organic dielectric layer as a hard mask layer, thereby forming a plurality of stacked structures. The organic dielectric layer is removed. A dielectric layer blanketly covers the patterns, the stacked structures, and the substrate.
Public/Granted literature
- US20200227269A1 METHOD OF FORMING DIELECTRIC LAYER BY ORGANIC DIELECTRIC LAYER Public/Granted day:2020-07-16
Information query
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