Invention Grant
- Patent Title: Cu—Ga alloy sputtering target and method of manufacturing Cu—Ga alloy sputtering target
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Application No.: US15560258Application Date: 2016-03-10
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Publication No.: US10822691B2Publication Date: 2020-11-03
- Inventor: Yuki Yoshida , Toshiaki Ueda , Satoru Mori
- Applicant: MITSUBISHI MATERIALS CORPORATION
- Applicant Address: JP Tokyo
- Assignee: MITSUBISHI MATERIALS CORPORATION
- Current Assignee: MITSUBISHI MATERIALS CORPORATION
- Current Assignee Address: JP Tokyo
- Agency: Locke Lord LLP
- Agent James E. Armstrong, IV; Nicholas J. DiCeglie, Jr.
- Priority: com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@283fc0f8 com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@56fbc2fe
- International Application: PCT/JP2016/057588 WO 20160310
- International Announcement: WO2016/158293 WO 20161006
- Main IPC: C23C14/34
- IPC: C23C14/34 ; H01L31/032 ; B22F3/105 ; B22F3/14 ; C22C9/00 ; B22F1/00
Abstract:
A Cu—Ga alloy sputtering target of the present invention is made of a Cu—Ga alloy, in which a carbon concentration is 30 ppm by mass or lower. In an observed structure, an area ratio of crystal grains having a grain size of 10 μm or less is 5% to 50% and an area ratio of crystal grains having a grain size of 100 μm or more is 1% to 30%.
Public/Granted literature
- US20180066355A1 Cu-Ga ALLOY SPUTTERING TARGET AND METHOD OF MANUFACTURING Cu-Ga ALLOY SPUTTERING TARGET Public/Granted day:2018-03-08
Information query
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