-
1.发明申请公开(公告)号：US20180066355A1
公开(公告)日：2018-03-08
申请号：US15560258
申请日：2016-03-10
Applicant: MITSUBISHI MATERIALS CORPORATION
Inventor： Yuki Yoshida , Toshiaki Ueda , Satoru Mori
Abstract: A Cu—Ga alloy sputtering target of the present invention is made of a Cu—Ga alloy, in which a carbon concentration is 30 ppm by mass or lower. In an observed structure, an area ratio of crystal grains having a grain size of 10 μm or less is 5% to 50% and an area ratio of crystal grains having a grain size of 100 μm or more is 1% to 30%.
-
公开(公告)号：US10822691B2
公开(公告)日：2020-11-03
申请号：US15560258
申请日：2016-03-10
Applicant: MITSUBISHI MATERIALS CORPORATION
Inventor： Yuki Yoshida , Toshiaki Ueda , Satoru Mori
Abstract: A Cu—Ga alloy sputtering target of the present invention is made of a Cu—Ga alloy, in which a carbon concentration is 30 ppm by mass or lower. In an observed structure, an area ratio of crystal grains having a grain size of 10 μm or less is 5% to 50% and an area ratio of crystal grains having a grain size of 100 μm or more is 1% to 30%.
-
Patent Agency Ranking
公开(公告)号：US09745201B2
公开(公告)日：2017-08-29
申请号：US15113570
申请日：2014-12-10
Applicant: MITSUBISHI MATERIALS CORPORATION
Inventor： Toshiaki Ueda
IPC: C01B33/18
CPC classification number: C01B33/18 , C01P2002/02 , C01P2004/51 , C01P2004/61 , C01P2004/62 , C01P2006/10 , C01P2006/12 , C01P2006/80
Abstract: The purpose of the present invention is to provide: a synthetic amorphous silica powder which is suitable as a raw material for a synthetic silica glass product used in a high-temperature and reduced-pressure environment, which can yield a synthetic silica product such that the occurrence or expansion of air bubbles in the glass product is inhibited even in use in a high-temperature and reduced-pressure environment, and which can be obtained at a relatively low cost; and a process for manufacturing the same.
-
公开(公告)号：US20150321939A1
公开(公告)日：2015-11-12
申请号：US14804857
申请日：2015-07-21
Applicant: MITSUBISHI MATERIALS CORPORATION
Inventor： Toshiaki Ueda
CPC classification number: C03B19/1065 , C01B33/14 , C01B33/18 , C01B33/181 , C01P2004/03 , C01P2004/32 , C01P2004/54 , C01P2004/61 , C01P2006/12 , C03B19/1095 , C03B2201/02 , C03C3/06 , C03C23/0075 , Y10T428/2982
Abstract: The synthetic amorphous silica powder of the present invention is characterized in that it comprises a synthetic amorphous silica powder obtained by applying a spheroidizing treatment to a silica powder, and by subsequently cleaning and drying it so that the synthetic amorphous silica powder has an average particle diameter D50 of 10 to 2,000 μm; wherein the synthetic amorphous silica powder has: a quotient of 1.00 to 1.35 obtained by dividing a BET specific surface area of the powder by a theoretical specific surface area calculated from the average particle diameter D50; a real density of 2.10 to 2.20 g/cm3; an intra-particulate porosity of 0 to 0.05; a circularity of 0.75 to 1.00; and an unmolten ratio of 0.00 to 0.25. This synthetic amorphous silica powder is less in amount of gas components adsorbed to surfaces of particles of the powder and in amount of gas components within the particles, so that a synthetic silica glass product manufactured by using the powder is remarkably decreased in amount of generation or degree of expansion of gas bubbles even upon usage of the product in a high temperature and reduced pressure environment.
Abstract translation: 本发明的合成无定形二氧化硅粉末的特征在于，其包含通过对二氧化硅粉末进行球化处理得到的合成无定形二氧化硅粉末，然后进行清洗和干燥，使得合成的无定形二氧化硅粉末的平均粒径 D50为10〜2000μm; 其中所述合成无定形二氧化硅粉末具有：通过将粉末的BET比表面积除以由平均粒径D50计算出的理论比表面积获得的1.00至1.35的商数; 实际密度为2.10〜2.20g / cm3; 颗粒内孔隙率为0至0.05; 0.75〜1.00的圆形度; 和0.00〜0.25的未摩尔比。 该合成无定形二氧化硅粉末的吸附量小于粉末颗粒表面的气体成分和颗粒内的气体成分量，所以使用该粉末的合成二氧化硅玻璃制品的产生量或产生量显着降低 即使在高温和减压环境下使用产品，气泡的膨胀程度也是如此。
-
5.发明申请公开(公告)号：US20190040524A1
公开(公告)日：2019-02-07
申请号：US16071659
申请日：2017-01-12
Applicant: MITSUBISHI MATERIALS CORPORATION
Inventor： Yuki Yoshida , Toshiaki Ueda , Satoru Mori
Abstract: Provided is a method of manufacturing a Cu—Ga alloy sputtering target made of a Cu—Ga alloy with a hollow portion, the method including: a calcining step of forming a calcined material by charging a raw material powder that includes at least a Cu—Ga alloy powder into a mold that includes a core and heating the raw material powder in a reducing atmosphere; and a main sintering step of forming a sintered material by removing the core from the calcined material and heating the calcined material in a reducing atmosphere, in which the core used in the calcining step is made of a material having a higher linear thermal expansion coefficient than a Cu—Ga alloy constituting theCu—Ga alloy sputtering target, and the calcined material is formed by holding the raw material powder at a temperature of 100-600° C. for 10 minutes to 10 hours in the calcining step.
-
公开(公告)号：US10023488B2
公开(公告)日：2018-07-17
申请号：US14804857
申请日：2015-07-21
Applicant: MITSUBISHI MATERIALS CORPORATION
Inventor： Toshiaki Ueda
Abstract: The synthetic amorphous silica powder of the present invention is characterized in that it comprises a synthetic amorphous silica powder obtained by applying a spheroidizing treatment to a silica powder, and by subsequently cleaning and drying it so that the synthetic amorphous silica powder has an average particle diameter D50 of 10 to 2,000 μm; wherein the synthetic amorphous silica powder has: a quotient of 1.00 to 1.35 obtained by dividing a BET specific surface area of the powder by a theoretical specific surface area calculated from the average particle diameter D50; a real density of 2.10 to 2.20 g/cm3; an intra-particulate porosity of 0 to 0.05; a circularity of 0.75 to 1.00; and an unmolten ratio of 0.00 to 0.25. This synthetic amorphous silica powder is less in amount of gas components adsorbed to surfaces of particles of the powder and in amount of gas components within the particles, so that a synthetic silica glass product manufactured by using the powder is remarkably decreased in amount of generation or degree of expansion of gas bubbles even upon usage of the product in a high temperature and reduced pressure environment.
-
公开(公告)号：US20170008772A1
公开(公告)日：2017-01-12
申请号：US15113570
申请日：2014-12-10
Applicant: MITSUBISHI MATERIALS CORPORATION
Inventor： Toshiaki Ueda
IPC: C01B33/18
CPC classification number: C01B33/18 , C01P2002/02 , C01P2004/51 , C01P2004/61 , C01P2004/62 , C01P2006/10 , C01P2006/12 , C01P2006/80
Abstract: The purpose of the present invention is to provide: a synthetic amorphous silica powder which is suitable as a raw material for a synthetic silica glass product used in a high-temperature and reduced-pressure environment, which can yield a synthetic silica product such that the occurrence or expansion of air bubbles in the glass product is inhibited even in use in a high-temperature and reduced-pressure environment, and which can be obtained at a relatively low cost; and a process for manufacturing the same.
Abstract translation: 本发明的目的是提供：合成的无定形二氧化硅粉末，其适合作为在高温和低压环境中使用的合成二氧化硅玻璃产品的原料，其可以产生合成二氧化硅产品，使得 即使在高温减压环境下使用也可以抑制玻璃制品中的气泡的发生或膨胀，能够以较低成本获得。 及其制造方法。
-
-
-
-
-
-
Search Results
7
records
(took 0.027 seconds)
