A memory device that includes a plurality subarrays of memory cells to store static weights and a plurality of digital full-adder circuits between subarrays of memory cells is provided. The digital full-adder circuit in the memory device eliminates the need to move data from a memory device to a processor to perform machine learning calculations. Rows of full-adder circuits are distributed between sub-arrays of memory cells to increase the effective memory bandwidth and reduce the time to perform matrix-vector multiplications in the memory device by performing bit-serial dot-product primitives in the form of accumulating m 1-bit×n-bit multiplications.