- Patent Title: Bulk substrates with a self-aligned buried polycrystalline layer
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Application No.: US16218868Application Date: 2018-12-13
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Publication No.: US10832940B2Publication Date: 2020-11-10
- Inventor: Steven M. Shank , Anthony K. Stamper , Ian McCallum-Cook , Siva P. Adusumilli
- Applicant: GLOBALFOUNDRIES Inc.
- Applicant Address: KY Grand Cayman
- Assignee: GLOBALFOUNDRIES INC.
- Current Assignee: GLOBALFOUNDRIES INC.
- Current Assignee Address: KY Grand Cayman
- Agency: Thompson Hine LLP
- Agent Anthony Canale
- Main IPC: H01L21/763
- IPC: H01L21/763 ; H01L29/06 ; H01L27/12 ; H01L21/762 ; H01L21/324 ; H01L21/84 ; H01L21/265 ; H01L21/74 ; H01L29/32 ; H01L21/02 ; H01L27/06 ; H01L29/10

Abstract:
Structures with altered crystallinity beneath semiconductor devices and methods associated with forming such structures. Trench isolation regions surround an active device region composed of a single-crystal semiconductor material. A first non-single-crystal layer is arranged beneath the trench isolation regions and the active device region. A second non-single-crystal layer is arranged beneath the trench isolation regions and the active device region. The first non-single-crystal layer is arranged between the second non-single-crystal layer and the active device region.
Public/Granted literature
- US20190295881A1 BULK SUBSTRATES WITH A SELF-ALIGNED BURIED POLYCRYSTALLINE LAYER Public/Granted day:2019-09-26
Information query
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