公开(公告)号：US20210074577A1

公开(公告)日：2021-03-11

申请号：US17086925

申请日：2020-11-02

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Steven M. Shank ,  Anthony K. Stamper ,  Ian McCallum-Cook ,  Siva P. Adusumilli

IPC: H01L21/763 ,  H01L29/06 ,  H01L27/12 ,  H01L21/762 ,  H01L21/324 ,  H01L21/84 ,  H01L21/265 ,  H01L21/74 ,  H01L29/32

Abstract: Structures with altered crystallinity beneath semiconductor devices and methods associated with forming such structures. Trench isolation regions surround an active device region composed of a single-crystal semiconductor material. A first non-single-crystal layer is arranged beneath the trench isolation regions and the active device region. A second non-single-crystal layer is arranged beneath the trench isolation regions and the active device region. The first non-single-crystal layer is arranged between the second non-single-crystal layer and the active device region.

公开(公告)号：US11527432B2

公开(公告)日：2022-12-13

申请号：US17086925

申请日：2020-11-02

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Steven M. Shank ,  Anthony K. Stamper ,  Ian McCallum-Cook ,  Siva P. Adusumilli

IPC: H01L21/763 ,  H01L29/06 ,  H01L27/12 ,  H01L21/762 ,  H01L21/324 ,  H01L21/84 ,  H01L21/265 ,  H01L21/74 ,  H01L29/32 ,  H01L21/02 ,  H01L27/06 ,  H01L29/10

Abstract: Structures with altered crystallinity beneath semiconductor devices and methods associated with forming such structures. Trench isolation regions surround an active device region composed of a single-crystal semiconductor material. A first non-single-crystal layer is arranged beneath the trench isolation regions and the active device region. A second non-single-crystal layer is arranged beneath the trench isolation regions and the active device region. The first non-single-crystal layer is arranged between the second non-single-crystal layer and the active device region.

公开(公告)号：US10643927B1

公开(公告)日：2020-05-05

申请号：US16192999

申请日：2018-11-16

Applicant: GLOBALFOUNDRIES INC.

Inventor： Steven Shank ,  Ian McCallum-Cook ,  John Hall

IPC: H01L23/48 ,  H01L29/06 ,  H01L23/66 ,  H01L21/768 ,  H01L21/764

Abstract: Through-substrate vias (TSVs) extend through a high resistivity semiconductor substrate laterally spaced and isolated from an active device formed over the substrate by deep trench isolation (DTI) structures. The deep trench isolation structures may extend partially or entirely through the substrate, and may include an air gap. The deep trench isolation structures entirely surround the active device and the TSVs.

公开(公告)号：US10832940B2

公开(公告)日：2020-11-10

申请号：US16218868

申请日：2018-12-13

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Steven M. Shank ,  Anthony K. Stamper ,  Ian McCallum-Cook ,  Siva P. Adusumilli

IPC: H01L21/763 ,  H01L29/06 ,  H01L27/12 ,  H01L21/762 ,  H01L21/324 ,  H01L21/84 ,  H01L21/265 ,  H01L21/74 ,  H01L29/32 ,  H01L21/02 ,  H01L27/06 ,  H01L29/10

Abstract: Structures with altered crystallinity beneath semiconductor devices and methods associated with forming such structures. Trench isolation regions surround an active device region composed of a single-crystal semiconductor material. A first non-single-crystal layer is arranged beneath the trench isolation regions and the active device region. A second non-single-crystal layer is arranged beneath the trench isolation regions and the active device region. The first non-single-crystal layer is arranged between the second non-single-crystal layer and the active device region.

公开(公告)号：US10651281B1

公开(公告)日：2020-05-12

申请号：US16207915

申请日：2018-12-03

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Siva P. Adusumilli ,  John J. Ellis-Monaghan ,  Anthony K. Stamper ,  Ian McCallum-Cook ,  Mark Goldstein

IPC: H01L29/32 ,  H01L29/66 ,  H01L29/786 ,  H01L21/265 ,  C23C16/48 ,  H01L21/762 ,  C23C16/40 ,  H01L29/04 ,  H01L21/266

Abstract: Structures with altered crystallinity beneath semiconductor devices and methods associated with forming such structures. A semiconductor layer is implanted over a first depth range of an inert gas species to modify the crystal structure of a semiconductor material of the semiconductor layer and form a first modified region. The semiconductor layer is annealed with a first annealing process to convert the semiconductor material within the first modified region to a non-single-crystal layer. The semiconductor layer is also implanted with ions of an element over a second depth range to modify the crystal structure of the semiconductor material of the semiconductor layer and form a second modified region containing a concentration of the element. The semiconductor layer is annealed with a second annealing process to convert the semiconductor material within the second modified region to an insulator layer containing the element.

公开(公告)号：US20200176589A1

公开(公告)日：2020-06-04

申请号：US16207915

申请日：2018-12-03

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Siva P. Adusumilli ,  John J. Ellis-Monaghan ,  Anthony K. Stamper ,  Ian McCallum-Cook ,  Mark Goldstein

IPC: H01L29/66 ,  H01L29/786 ,  H01L21/265 ,  H01L21/762 ,  C23C16/40 ,  C23C16/48

Abstract: Structures with altered crystallinity beneath semiconductor devices and methods associated with forming such structures. A semiconductor layer is implanted over a first depth range of an inert gas species to modify the crystal structure of a semiconductor material of the semiconductor layer and form a first modified region. The semiconductor layer is annealed with a first annealing process to convert the semiconductor material within the first modified region to a non-single-crystal layer. The semiconductor layer is also implanted with ions of an element over a second depth range to modify the crystal structure of the semiconductor material of the semiconductor layer and form a second modified region containing a concentration of the element. The semiconductor layer is annealed with a second annealing process to convert the semiconductor material within the second modified region to an insulator layer containing the element.

公开(公告)号：US20190295881A1

公开(公告)日：2019-09-26

申请号：US16218868

申请日：2018-12-13

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Steven M. Shank ,  Anthony K. Stamper ,  Ian McCallum-Cook ,  Siva P. Adusumilli

IPC: H01L21/763 ,  H01L29/06 ,  H01L21/84 ,  H01L27/12 ,  H01L27/06 ,  H01L21/762 ,  H01L21/265 ,  H01L21/324

Abstract: Structures with altered crystallinity beneath semiconductor devices and methods associated with forming such structures. Trench isolation regions surround an active device region composed of a single-crystal semiconductor material. A first non-single-crystal layer is arranged beneath the trench isolation regions and the active device region. A second non-single-crystal layer is arranged beneath the trench isolation regions and the active device region. The first non-single-crystal layer is arranged between the second non-single-crystal layer and the active device region.

公开(公告)号：US10192779B1

公开(公告)日：2019-01-29

申请号：US15935606

申请日：2018-03-26

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Steven M. Shank ,  Anthony K. Stamper ,  Ian McCallum-Cook ,  Siva P. Adusumilli

IPC: H01L21/763 ,  H01L29/06 ,  H01L27/12 ,  H01L27/06 ,  H01L21/762 ,  H01L21/324 ,  H01L21/84 ,  H01L21/265 ,  H01L21/02

Abstract: Structures with altered crystallinity beneath semiconductor devices and methods associated with forming such structures. Trench isolation regions surround an active device region composed of a single-crystal semiconductor material. A non-single-crystal layer has a first section arranged beneath the trench isolation regions and a second section arranged beneath the active device region. The first section of the non-single-crystal layer has a first width in a vertical direction. The second section of the non-single-crystal layer has a second width in the vertical direction that is less than the first width of the first section of the non-single-crystal layer.