Invention Grant
- Patent Title: Inductive testing probe apparatus for testing semiconductor die and related systems and methods
-
Application No.: US15839559Application Date: 2017-12-12
-
Publication No.: US10852344B2Publication Date: 2020-12-01
- Inventor: Tony M. Lindenberg , Kurt J. Bossart , Jonathan S. Hacker , Chandra S. Tiwari
- Applicant: Micron Technology, Inc.
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: TraskBritt
- Main IPC: G01R31/28
- IPC: G01R31/28 ; H01L21/67 ; G01R1/073 ; H01L21/68

Abstract:
A testing probe apparatus for testing die. The testing probe may include a probe interface and a carrier for supporting at least one die comprising 3DI structures. The probe interface may be positionable on a first side of the at least one die and include a voltage source and at least one first inductor operably coupled to the voltage source. A voltage sensor and at least one second inductor coupled to the voltage sensor may be disposed on a second opposing side of the at least one die. The voltage source of the probe interface may be configured to inductively cause a voltage within the 3DI structures of the at least one die via the at least one first inductor. The voltage sensor may be configured to sense a voltage within the at least one 3DI structure via the at least one second inductor. Related systems and methods are also disclosed.
Public/Granted literature
- US20190178933A1 INDUCTIVE TESTING PROBE APPARATUS FOR TESTING SEMICONDUCTOR DIE AND RELATED SYSTEMS AND METHODS Public/Granted day:2019-06-13
Information query