Via structure and methods thereof
Abstract:
A method includes providing a substrate, wherein the substrate includes a conductive feature in a top portion of the substrate; forming a buffer layer over the substrate; forming a dielectric layer over the buffer layer; performing a first etching process to form an opening in the dielectric layer, thereby exposing a top surface of the buffer layer; and performing a second etching process to extend the opening downwardly into the buffer layer, thereby exposing a top surface of the conductive feature, wherein the performing of the second etching process includes laterally enlarging a footing profile of the opening.
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