Some embodiments include a memory cell having a first transistor supported by a semiconductor base, and having second and third transistors above the first transistor and vertically stacked one atop the other. Some embodiments include a memory cell having first, second and third transistors. The third transistor is above the second transistor, and the second and third transistors are above the first transistor. The first transistor has first and second source/drain regions, the second transistor has third and fourth source/drain regions, and the third transistor has fifth and sixth source/drain regions. A read bitline is coupled with the sixth source/drain region. A write bitline is coupled with the first source/drain region. A write wordline includes a gate of the first transistor. A read wordline includes a gate of the third transistor. A capacitor is coupled with the second source/drain region and with a gate of the second transistor.