Invention Grant
- Patent Title: Single photon avalanche gate sensor device
-
Application No.: US16222542Application Date: 2018-12-17
-
Publication No.: US10861997B2Publication Date: 2020-12-08
- Inventor: Francois Roy
- Applicant: STMicroelectronics (Crolles 2) SAS
- Applicant Address: FR Crolles
- Assignee: STMicroelectronics (Crolles 2) SAS
- Current Assignee: STMicroelectronics (Crolles 2) SAS
- Current Assignee Address: FR Crolles
- Agency: Crowe & Dunlevy
- Main IPC: H01L31/113
- IPC: H01L31/113 ; H01L31/0224 ; H01L27/146

Abstract:
A semiconductor substrate doped with a first doping type is positioned adjacent an insulated gate electrode that is biased by a gate voltage. A first region within the semiconductor substrate is doped with the first doping type and biased with a bias voltage. A second region within the semiconductor substrate is doped with a second doping type that is opposite the first doping type. Voltage application produces an electrostatic field within the semiconductor substrate causing the formation of a fully depleted region within the semiconductor substrate. The fully depleted region responds to absorption of a photon with an avalanche multiplication that produces charges that are collected at the first and second regions.
Public/Granted literature
- US20190312170A1 SINGLE PHOTON AVALANCHE GATE SENSOR DEVICE Public/Granted day:2019-10-10
Information query
IPC分类: