Invention Grant
- Patent Title: Conductive contact having staircase barrier layers
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Application No.: US16050191Application Date: 2018-07-31
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Publication No.: US10886226B2Publication Date: 2021-01-05
- Inventor: Chia-Yang Wu , Shiu-Ko JangJian , Ting-Chun Wang , Yung-Si Yu
- Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
- Applicant Address: TW Hsinchu
- Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee Address: TW Hsinchu
- Agency: Haynes and Boone, LLP
- Main IPC: H01L23/532
- IPC: H01L23/532 ; H01L29/417 ; H01L21/768 ; H01L21/3213 ; H01L21/311
Abstract:
A semiconductor device includes a transistor having a source/drain and a gate. The semiconductor device also includes a conductive contact for the transistor. The conductive contact provides electrical connectivity to the source/drain or the gate of the transistor. The conductive contact includes a plurality of barrier layers. The barrier layers have different depths from one another.
Public/Granted literature
- US20200043858A1 CONDUCTIVE CONTACT HAVING STAIRCASE-LIKE BARRIER LAYERS Public/Granted day:2020-02-06
Information query
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