公开(公告)号：US20210125935A1

公开(公告)日：2021-04-29

申请号：US17140654

申请日：2021-01-04

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chia-Yang Wu ,  Shiu-Ko JangJian ,  Ting-Chun Wang ,  Yung-Si Yu

IPC: H01L23/532 ,  H01L29/417 ,  H01L21/768 ,  H01L21/3213

Abstract: A semiconductor device includes a transistor having a source/drain and a gate. The semiconductor device also includes a conductive contact for the transistor. The conductive contact provides electrical connectivity to the source/drain or the gate of the transistor. The conductive contact includes a plurality of barrier layers. The barrier layers have different depths from one another.

公开(公告)号：US11031488B2

公开(公告)日：2021-06-08

申请号：US16852973

申请日：2020-04-20

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chia-Yang Wu ,  Shiu-Ko Jangjian ,  Ting-Chun Wang ,  Yung-Si Yu

IPC: H01L29/66 ,  H01L29/417 ,  H01L29/78 ,  H01L21/768 ,  H01L21/762 ,  H01L21/285 ,  H01L29/49 ,  H01L29/165

Abstract: A semiconductor device structure is provided. The semiconductor device structure includes a transistor over a substrate. The semiconductor device structure includes a dielectric structure over the substrate and covering the transistor. The semiconductor device structure includes a contact structure passing through the dielectric structure and electrically connected to the transistor. The contact structure includes a contact layer, a first barrier layer, and a second barrier layer, the first barrier layer surrounds the contact layer, the second barrier layer surrounds a first upper portion of the first barrier layer, a first lower portion of the first barrier layer is in direct contact with the dielectric structure, and a thickness of the first lower portion increases toward the substrate.

公开(公告)号：US10886226B2

公开(公告)日：2021-01-05

申请号：US16050191

申请日：2018-07-31

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chia-Yang Wu ,  Shiu-Ko JangJian ,  Ting-Chun Wang ,  Yung-Si Yu

IPC: H01L23/532 ,  H01L29/417 ,  H01L21/768 ,  H01L21/3213 ,  H01L21/311

Abstract: A semiconductor device includes a transistor having a source/drain and a gate. The semiconductor device also includes a conductive contact for the transistor. The conductive contact provides electrical connectivity to the source/drain or the gate of the transistor. The conductive contact includes a plurality of barrier layers. The barrier layers have different depths from one another.

公开(公告)号：US20200043858A1

公开(公告)日：2020-02-06

申请号：US16050191

申请日：2018-07-31

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chia-Yang Wu ,  Shiu-Ko JangJian ,  Ting-Chun Wang ,  Yung-Si Yu

IPC: H01L23/532 ,  H01L29/417 ,  H01L21/768 ,  H01L21/3213

Abstract: A semiconductor device includes a transistor having a source/drain and a gate. The semiconductor device also includes a conductive contact for the transistor. The conductive contact provides electrical connectivity to the source/drain or the gate of the transistor. The conductive contact includes a plurality of barrier layers. The barrier layers have different depths from one another.

公开(公告)号：US20240379557A1

公开(公告)日：2024-11-14

申请号：US18782167

申请日：2024-07-24

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chia-Yang Wu ,  Shiu-Ko JangJian ,  Ting-Chun Wang ,  Yung-Si Yu

IPC: H01L23/532 ,  H01L21/311 ,  H01L21/3213 ,  H01L21/768 ,  H01L29/417

Abstract: A semiconductor device includes a transistor having a source/drain and a gate. The semiconductor device also includes a conductive contact for the transistor. The conductive contact provides electrical connectivity to the source/drain or the gate of the transistor. The conductive contact includes a plurality of barrier layers. The barrier layers have different depths from one another.

公开(公告)号：US11929328B2

公开(公告)日：2024-03-12

申请号：US17140654

申请日：2021-01-04

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chia-Yang Wu ,  Shiu-Ko JangJian ,  Ting-Chun Wang ,  Yung-Si Yu

IPC: H01L23/532 ,  H01L21/311 ,  H01L21/3213 ,  H01L21/768 ,  H01L29/417

CPC classification number: H01L23/53266 ,  H01L21/32135 ,  H01L21/76804 ,  H01L21/76846 ,  H01L21/76847 ,  H01L21/76865 ,  H01L29/41725 ,  H01L21/31111 ,  H01L21/31116

Abstract: A semiconductor device includes a transistor having a source/drain and a gate. The semiconductor device also includes a conductive contact for the transistor. The conductive contact provides electrical connectivity to the source/drain or the gate of the transistor. The conductive contact includes a plurality of barrier layers. The barrier layers have different depths from one another.

公开(公告)号：US20240079332A1

公开(公告)日：2024-03-07

申请号：US18504714

申请日：2023-11-08

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chia-Yang Wu ,  Shiu-Ko JangJian ,  Ting-Chun Wang ,  Yung-Si Yu

IPC: H01L23/532 ,  H01L21/3213 ,  H01L21/768 ,  H01L29/417

CPC classification number: H01L23/53266 ,  H01L21/32135 ,  H01L21/76804 ,  H01L21/76846 ,  H01L21/76847 ,  H01L21/76865 ,  H01L29/41725 ,  H01L21/31116

Abstract: A semiconductor device includes a transistor having a source/drain and a gate. The semiconductor device also includes a conductive contact for the transistor. The conductive contact provides electrical connectivity to the source/drain or the gate of the transistor. The conductive contact includes a plurality of barrier layers. The barrier layers have different depths from one another.