An embodiment includes a substrate having a surface; a first layer that includes a metal and is on the substrate; a second layer that includes the metal and is on the first layer; a first switching device between the first and second layers; a second switching device between the first and second layers; a capacitor between the first and second layers, the capacitor including ferroelectric materials; a memory cell that includes the first switching device and the capacitor; an interconnect line that couples the first and second switching devices to each other; wherein: (a) the surface is substantially disposed in a first plane, and (b) a second plane is parallel to the first plane, the second plane intersecting the first and second switching devices. Other embodiments are addressed herein.