Invention Grant
- Patent Title: Magnetoresistive devices and methods therefor
-
Application No.: US16380207Application Date: 2019-04-10
-
Publication No.: US10886331B2Publication Date: 2021-01-05
- Inventor: Jijun Sun
- Applicant: Everspin Technologies, Inc.
- Applicant Address: US AZ Chandler
- Assignee: Everspin Technologies, Inc.
- Current Assignee: Everspin Technologies, Inc.
- Current Assignee Address: US AZ Chandler
- Agency: Bookoff McAndrews, PLLC
- Main IPC: H01L27/22
- IPC: H01L27/22 ; H01L43/02 ; H01L43/08 ; H01L43/12
Abstract:
A method of manufacturing a magnetoresistive device may include forming a first ferromagnetic region, forming an intermediate region on or above the first ferromagnetic region. The intermediate region may be formed of a dielectric material and include nitrogen. The method may also include forming a second ferromagnetic region on or above the intermediate region.
Public/Granted literature
- US20200328252A1 MAGNETORESISTIVE DEVICES AND METHODS THEREFOR Public/Granted day:2020-10-15
Information query
IPC分类:
