Invention Grant
- Patent Title: Method of forming air-gap spacers and gate contact over active region and the resulting device
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Application No.: US16238173Application Date: 2019-01-02
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Publication No.: US10886378B2Publication Date: 2021-01-05
- Inventor: Ruilong Xie , Julien Frougier , Chanro Park , Kangguo Cheng
- Applicant: GLOBALFOUNDRIES Inc.
- Applicant Address: KY Grand Cayman
- Assignee: GLOBALFOUNDRIES Inc.
- Current Assignee: GLOBALFOUNDRIES Inc.
- Current Assignee Address: KY Grand Cayman
- Agency: Ditthavong & Steiner, P. C.
- Main IPC: H01L21/02
- IPC: H01L21/02 ; H01L29/49 ; H01L21/8234 ; H01L29/78 ; H01L29/45 ; H01L23/535 ; H01L21/285 ; H01L21/768 ; H01L29/66 ; H01L27/088
Abstract:
A device including a substrate and at least one fin formed over the substrate. At least one transistor is integrated with the fin at a top portion of the fin. The transistor includes an active region comprising a source, a drain and a channel region between the source and drain. A gate structure is formed over the channel region, and the gate structure includes a HKMG and air-gap spacers formed on opposite sidewalls of the HKMG. Each of the air-gap spacers includes an air gap that is formed along a trench silicide region, and the air-gap is formed below a top of the HKMG. A gate contact is formed over the active region.
Public/Granted literature
- US20200212192A1 METHOD OF FORMING AIR-GAP SPACERS AND GATE CONTACT OVER ACTIVE REGION AND THE RESULTING DEVICE Public/Granted day:2020-07-02
Information query
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