Invention Grant
- Patent Title: High purity copper sputtering target material
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Application No.: US15754403Application Date: 2016-08-03
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Publication No.: US10889889B2Publication Date: 2021-01-12
- Inventor: Satoru Mori , U Tani , Yuuji Sato , Fumitake Kikuchi , Isao Arai
- Applicant: MITSUBISHI MATERIALS CORPORATION
- Applicant Address: JP Tokyo
- Assignee: MITSUBISHI MATERIALS CORPORATION
- Current Assignee: MITSUBISHI MATERIALS CORPORATION
- Current Assignee Address: JP Tokyo
- Agency: Locke Lord LLP
- Agent James E. Armstrong, IV; Nicholas J. DiCeglie, Jr.
- Priority: JP2015-164631 20150824,JP2015-200108 20151008,JP2015-200109 20151008,JP2015-200110 20151008,JP2016-031174 20160222,JP2016-031334 20160222
- International Application: PCT/JP2016/072819 WO 20160803
- International Announcement: WO2017/033694 WO 20170302
- Main IPC: C23C14/34
- IPC: C23C14/34 ; C25C1/12 ; C25C7/02 ; C22F1/08 ; C22C9/00

Abstract:
A high purity copper sputtering target material includes Cu at a purity of 99.99998 mass % or more excluding O, H, N and C, wherein an Al content is 0.005 mass ppm or less, a Si content is 0.05 mass ppm or less, an Fe content is 0.02 mass ppm or less, a S content is 0.03 mass ppm or less, Cl content is 0.1 mass ppm or less, n O content is 1 mass ppm or less, H content is 1 mass ppm or less, a N content is 1 mass ppm or less, and a C content is 1 mass ppm or less.
Public/Granted literature
- US20180237901A1 HIGH PURITY COPPER SPUTTERING TARGET MATERIAL Public/Granted day:2018-08-23
Information query
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